Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB507 CSD313 CSB507, CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 F K All dim insions in m m . L N O 1 2 3 O A H B C E J D G M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 2A; IB = 0.2A D.C. current gain IC = 1A; VCE = 2V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Continental Device India Limited Data Sheet DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 3 M A X. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 VCBO VCEO IC Ptot Tj max. max. max. max. max. 60 60 3.0 30 150 V V A W °C VCEsat max. 1.0 V hFE min max. 40 320 VCBO VCEO VEBO max. max. max. 60 V 60 V 5.0 V Page 1 of 3 CSB507, CSD313 Collector current Collector current (Peak value) Total power dissipation up to TC = 25°C Junction temperature Storage temperature IC ICM Ptot Tj Tstg max. 3.0 A max. 8.0 A max. 30 W max. 150 ºC –65 to +150 ºC THERMAL CHARACTERISTICS From junction to case Rth j–c = ICBO ICEO max. max. 0.1 mA 5.0 mA IEBO max. 1.0 mA VCEO VCBO VEBO min. min. min. 60 V 60 V 5.0 V VCEsat* max. 1.0 V VBE(on)* max. 1.5 V hFE* min. 40 hFE* min. max. 40 320 fT typ. 4.17 °C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 20V IB = 0; VCE = 60V Emitter cut-off current IC = 0; VEB = 4V Breakdown voltages IC = 1 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 2 A; IB = 0.2 A Base emitter on voltage IC = 1A; VCE = 2V D.C. current gain IC = 0.1A; VCE = 2V IC = 1A; VCE = 2V** Transition frequency IC = 500 mA; VCE = 5V 8 MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2.0%. ** hFE classification: C: 40-80 D: 60-120 E: 100-200 F: 160-320 Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 [email protected] www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3