HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • X to Ku-band DBS LNB • Other X to Ku-band communication systems ORDERING INFORMATION Part Number Order Number Package NE3511S02-T1C NE3511S02-T1C-A S02 (Pb-Free) NE3511S02-T1D NE3511S02-T1D-A Quantity 2 kpcs/reel Marking B 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3511S02-A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS −3 V Drain Current ID IDSS mA Gate Current IG 100 µA 165 mW Total Power Dissipation Ptot Note Channel Temperature Tch +125 °C Storage Temperature Tstg −65 to +125 °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10642EJ01V0DS (1st edition) Date Published October 2006 NS CP(N) 2006 NE3511S02 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit VDS 1 2 3 V Drain Current ID 5 10 20 mA Input Power Pin − − 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10 µA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 20 40 70 mA VGS (off) VDS = 2 V, ID = 100 µA −0.2 −0.7 −1.7 V Transconductance gm VDS = 2 V, ID = 10 mA 50 65 − mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz − 0.30 0.45 dB Associated Gain Ga 12.5 13.5 − dB Gate to Source Cutoff Voltage 2 Data Sheet PG10642EJ01V0DS NE3511S02 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 Drain Current ID (mA) Total Power Dissipation Ptot (mW) 250 150 100 50 80 60 VGS = 0 V 40 –0.2 V 20 –0.4 V –0.6 V 0 50 100 150 200 250 1.0 0 Ambient Temperature TA (˚C) 2.0 Drain to Source Voltage VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 80 Drain Current ID (mA) VDS = 2 V 60 40 20 0 –2.0 –1.0 0 Gate to Source Voltage VGS (V) 20 1.6 1.4 Ga 1.2 15 1.0 10 0.8 0.6 NFmin 0.4 5 Associated Gain Ga (dB) VDS = 2 V ID = 10 mA 1.8 0.2 0.0 0 2 4 6 8 10 12 14 0 16 18 20 Minimum Noise Figure NFmin (dB) 25 2.0 Minimum Noise Figure NFmin (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 1.6 16 f = 12 GHz 1.4 VDS = 2 V 14 1.2 12 Ga 1.0 10 0.8 8 0.6 6 NFmin 0.4 4 0.2 Associated Gain Ga (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 2 0.0 0 Frequency f (GHz) 5 10 15 20 0 25 Drain Current ID (mA) Remark The graphs indicate nominal characteristics. Data Sheet PG10642EJ01V0DS 3 NE3511S02 S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html 4 Data Sheet PG10642EJ01V0DS NE3511S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) 2.80 2.60 2.06 0.64 13.0 0.54 0.74 2.06 1.7 mm/R.P. 2.6 Reference Plane (Calibration Plane) 1.7 1.7 Reference Plane (Calibration Plane) φ 0.3 TH L2–uX Ver. 1 6.0 RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz Data Sheet PG10642EJ01V0DS 5 NE3511S02 PACKAGE DIMENSIONS S02 (UNIT: mm) (Top View) (Bottom View) 3.2±0.2 0.65 TYP. 2.2±0.2 1 2.2±0.2 0.5 TYP. 2.6±0.1 1 B 2 4 (Side View) 2.2±0.2 0.15±0.05 1.7 1.5 MAX. 2 3 3 3.2±0.2 PIN CONNECTIONS 1. 2. 3. 4. 6 4 Source Drain Source Gate Data Sheet PG10642EJ01V0DS NE3511S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10642EJ01V0DS 7 NE3511S02 • The information in this document is current as of October, 2006. The information is subject to change without notice. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 8 Data Sheet PG10642EJ01V0DS NE3511S02 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. 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