CEL NE3514S02-T1D-A

HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3514S02
K BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
NE3514S02-T1C
NE3514S02-T1C-A
S02 (Pb-Free)
NE3514S02-T1D
NE3514S02-T1D-A
Quantity
2 kpcs/reel
Marking
D
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3514S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
−3
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
165
mW
Total Power Dissipation
Ptot
Note
Channel Temperature
Tch
+125
°C
Storage Temperature
Tstg
−65 to +125
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10593EJ01V0DS (1st edition)
Date Published February 2006 CP(N)
NE3514S02
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
Drain Current
ID
5
10
15
mA
Input Power
Pin
−
−
0
dBm
Drain to Source Voltage
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = −3 V
−
0.5
10
µA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
15
40
70
mA
VGS (off)
VDS = 2 V, ID = 100 µA
−0.2
−0.7
−2.0
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
40
55
−
mS
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 20 GHz
−
0.75
1.0
dB
Associated Gain
Ga
8
10
−
dB
Gate to Source Cutoff Voltage
2
Data Sheet PG10593EJ01V0DS
NE3514S02
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
Drain Current ID (mA)
Total Power Dissipation Ptot (mW)
250
150
100
50
80
60
VGS = 0 V
40
–0.2 V
20
–0.4 V
–0.6 V
0
50
100
150
200
250
0
Ambient Temperature TA (˚C)
1.0
2.0
Drain to Source Voltage VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
Drain Current ID (mA)
VDS = 2 V
60
40
20
0
–2.0
–1.0
0
Gate to Source Voltage VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
20
VDS = 2 V
ID = 10 mA
1.8
18
16
1.6
1.4
14
Ga
1.2
12
1.0
10
0.8
8
6
0.6
NFmin
0.4
4
2
0.2
0.0
0
Associated Gain Ga (dB)
Minimum Noise Figure NFmin (dB)
2.0
5
10
15
20
25
0
30
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10593EJ01V0DS
3
NE3514S02
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PG10593EJ01V0DS
NE3514S02
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
2.80
2.60
2.06
0.64
13.0
0.54
0.74
2.06
1.7 mm/R.P.
2.6
Reference Plane
(Calibration Plane)
1.7
1.7
Reference Plane
(Calibration Plane)
φ 0.3 TH
L2–uX Ver. 1
6.0
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
Data Sheet PG10593EJ01V0DS
5
NE3514S02
PACKAGE DIMENSIONS
S02 (UNIT: mm)
(Top View)
(Bottom View)
3.2±0.2
0.65 TYP.
2.2±0.2
1
2.2±0.2
0.5 TYP.
2.6±0.1
1
D
2
4
(Side View)
2.2±0.2
0.15±0.05
1.7
1.5 MAX.
2
3
3
3.2±0.2
PIN CONNECTIONS
1.
2.
3.
4.
6
4
Source
Drain
Source
Gate
Data Sheet PG10593EJ01V0DS
NE3514S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10593EJ01V0DS
7
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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