NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET OUTLINE DIMENSIONS (Units in mm) FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, PACKAGE OUTLINE 79A (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. Drain 4.4 MAX. W • HIGH LINEAR GAIN: GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V, 0.6±0.15 5.7 MAX. Gate Source 0.8±0.15 ηadd = 50% TYP., f = 460 MHz, VDS = 7.5 V, 1.5±0.2 Source 21001 • HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V, 4.2 MAX. 3 Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V, GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V, • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX 0.4±0.15 APPLICATIONS DESCRIPTION • UHF RADIO SYSTEMS NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power ampliﬁer for 7.5 V radio systems. Die are manufactured using NEC's NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efﬁciency at 900 MHz using a 7.5 V supply voltage. • CELLULAR REPEATERS • TWO-WAY RADIOS • FRS/GMRS • FIXED WIRELESS SYMBOL PARAMETER 3.6±0.2 0.2±0.1 0.9±0.2 • SINGLE SUPPLY: VDS = 2.8 to 8.0 V ELECTRICAL CHARACTERISTICS 0.8 MAX. 5.7 MAX. (TA = 25°C) MIN TYP MAX UNIT TEST CONDITIONS Pout Output Power 38.5 40.0 − dBm ID Drain Current − 2.5 − A Pin = 27 dBm, f = 900 MHz, VDS = 7.5 V, 42 48 − % IDSQ = 400 mA (RF OFF) GL Linear Gain − 15.0 − dB Pin = 5 dBm Pout Output Power − 40.5 − dBm ID Drain Current − 2.75 − A Pin = 25 dBm, ηadd Power Added Efﬁciency f = 460 MHz, VDS = 7.5 V, Power Added Efﬁciency − 50 − % IDSQ = 400 mA (RF OFF) GL Linear Gain − 18.5 − dB Pin = 5 dBm IGSS Gate to Source Leak Current − − 100 nA VGS = 6.0 V IDSS Drain to Source Leakage Current (Zero Gate Voltage Drain Current) − − 100 nA VDS = 8.5 V Vth Gate Threshold Voltage 1.0 1.5 2.0 V VDS = 4.8 V, IDS = 1.5 mA Rth Thermal Resistance − 5 − °C/W gm Transconductance − 2.3 − S VDS = 3.5 V, IDS = 900 mA 20 24 − V IDSS = 15 μA ηadd BVDSS Drain to Source Breakdown Voltage Channel to Case Notes: DC performance is 100% tested. RF performance is tested on several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. California Eastern Laboratories NE5511279A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS PARAMETERS UNITS RATINGS RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS UNITS TYP MAX VDS Drain Supply Voltage V 20.0 VDS Drain to Source Voltage V 7.5 8.0 VGS Gate Supply Voltage V 6.0 VGS Gate Supply Voltage V 2.0 3.0 Drain Current A 3.0 IDS Drain Current1 A 2.5 3.0 20 PIN Input Power f = 900 MHz, VDS = 7.5 V dBm 27 30 ID PTOT 2 Total Power Dissipation W TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. VDS must be used under 12 V on RF operation. ORDERING INFORMATION P.C.B. LAYOUT (Units in mm) PART NUMBER 79A PACKAGE NE5511279A-T1-A 4.0 1.7 Source QTY • 12 mm wide embossed taping. • Gate pin faces the perforation side of the tape. • 1 Kpcs/Reel NE5511279A-T1A-A 0.5 1.2 Drain 1.0 5.9 Gate Through hole φ 0.2 × 33 0.5 0.5 6.1 Note: Use rosin or other material to prevent solder from penetrating through-holes. TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER, DRAIN CURRENT, ηd, ηadd vs. INPUT POWER ηd 30 ηadd 25 3 2 1 10 15 20 25 Input Power,Pin (dBm) 30 0 35 75 50 25 0 5 f = 460 MHz Pout 40 4 IDS 35 ηd 30 ηadd 25 20 3 2 1 10 15 20 25 Input Power,Pin (dBm) 30 0 35 100 75 50 25 0 Drain Efﬁciency, ηd (%) Power Added Efﬁciency, ηadd (%) IDS 35 100 Output Power, Pout (dBm) 4 Drain Efﬁciency, ηd (%) Power Added Efﬁciency, ηadd (%) 40 20 45 Pout Drain to Source Current, IDS (A) 5 f = 900 MHz Drain to Source Current, IDS (A) Output Power, Pout (dBm) 45 OUTPUT POWER, DRAIN CURRENT, ηd, ηadd vs. INPUT POWER NE5511279A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales ofﬁce. Soldering Method Soldering Conditions Condition Symbol Infrared Reﬂow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reﬂow processes Maximum chlorine content of rosin ﬂux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reﬂow processes : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times VP215 Maximum chlorine content of rosin ﬂux (% mass) : 0.2%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of ﬂow processes Maximum chlorine content of rosin ﬂux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin ﬂux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/26/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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