NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS (Units in mm) • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1 MIN dBm TYP % 50 Drain Current A 1.0 Saturated Drain Current A 4.5 VP Pinch-Off Voltage V RTH Thermal Resistance IDSS BVGD Gate-to-Drain Breakdown Voltage 9.0 -3.6 °C/W V MAX TEST CONDITIONS 35.0 Power Added Efficiency ID 1.2 MAX 79A UNITS dB ηADD 1.0 MAX NE6500379A Linear Gain1 GL 4.4 MAX 0.8 – 0.15 X 9 = 25°C) PART NUMBER Power Out at 1dB Gain Compression BOTTOM VIEW Note: Unless otherwise specified, tolerance is ±0.2 mm PACKAGE OUTLINE CHARACTERISTICS 0.8 MAX 3.6 – 0.2 0.9 – 0.2 ELECTRICAL CHARACTERISTICS (TC Drain Gate 0.4 – 0.15 NEC's NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures Electrical DC Characteristics Drain 5.7 MAX DESCRIPTION P1dB E 5.7 MAX 0.6 – 0.15 • HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz T Source Gate • HIGH OUTPUT POWER: 35 dBm TYP SYMBOLS 1.5 – 0.2 4.2 MAX • USABLE TO 2.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS 17 f = 1.9 GHz, VDS = 6.0 V Rg = 30 Ω IDSQ = 500 mA (RF OFF)2 10.0 VDS = 2.5 V; VGS = 0 V -2.6 -1.6 VDS = 2.5 V; IDS = 21 mA 5 6 Channel to Case IGD = 21 mA Notes: 1. Pin = 0 dBm 2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples. California Eastern Laboratories NE6500379A ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C) RECOMMENDED OPERATING LIMITS SYMBOLS SYMBOLS PARAMETERS UNITS RATINGS PARAMETERS UNITS TYP V 6.0 MAX VDS Drain to Source Voltage V 15 VDS Drain to Source Voltage VGS Gate to Source Voltage V -7.0 TCH Channel Temperature °C 125 IDS Drain Current A 5.6 GCOMP Gain Compression dB 3.0 IGS Gate Current mA 50 PT Total Power Dissipation W 21 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ORDERING INFORMATION PART NUMBER QTY NE6500379A-T1 1 K/Reel NE6500379A TYPICAL PERFORMANCE CURVES Bulk, 50 piece min. (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DRAIN CURRENT vs. DRAIN VOLTAGE 5 22 W VGS = 4 Drain Current, ID (A) 20 15 RTH = 6 °C/W 10 5 0V 3 -0.50 V 2 -1.0 V -1.5 V 1 -2.0 V 0 18 °C 0 50 100 0 0 150 1 2 5 4 3 Case Temperature, TC (°C) Drain Voltage, VD (V) TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE MAXIMUM AVAILABLE GAIN vs. FREQUENCY 2.00 1.00 1.00 0.4 0.5 0.2 0.00 -3.50 0.00 -1.50 Gate Voltage, VG (V) Maximum Available Gain, GMAG (dB) 0.8 0.6 6 25.0 Drain Current, ID (A) Total Power Dissipation, PD (W) 25 Transconductance, GM (mS) 6.0 20.0 3V 300 mA 8V 500 mA 15.0 6V 500 mA 10.0 5.0 0.1 0.2 0.4 0.6 1.0 Frequency, f (GHz) 2.0 4.0 NE6500379A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 90˚ j10 S11 4.0 GHz S22 4.0 GHz 10 0 -j10 120˚ j100 j25 25 60˚ S12 0.5 GHz S21 0.5 GHz 150˚ 50 100 180˚ 0 S12 4.0 GHz S21 4.0 GHz S11 0.5 GHz S22 0.5 GHz Coordinates in Ohms Frequency in GHz VD = 3.0 V, ID = 300 mA -j100 -j25 30˚ 0˚ -150˚ -30˚ -120˚ -60˚ -90˚ -j50 NE6500379A VD = 6.0 V, ID = 500 mA FREQUENCY GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 S21 S11 MAG 0.966 0.967 0.965 0.965 0.965 0.965 0.965 0.965 0.965 0.965 0.965 0.966 0.966 0.966 0.966 0.967 0.968 0.967 0.968 0.968 0.969 0.969 0.970 0.970 0.970 0.971 0.970 0.972 0.971 0.971 0.973 0.974 0.973 0.974 0.973 0.974 ANG -174.30 -177.11 -179.62 178.38 176.58 174.96 173.44 172.10 170.80 169.61 168.44 167.32 166.26 165.26 164.32 163.43 162.52 161.56 160.76 160.00 159.26 158.55 157.78 157.08 156.48 155.74 155.08 154.43 153.91 153.33 152.84 152.20 151.72 151.28 150.86 150.75 MAG 2.139 1.783 1.531 1.343 1.192 1.072 0.975 0.895 0.825 0.765 0.716 0.672 0.632 0.596 0.566 0.540 0.513 0.488 0.468 0.450 0.432 0.413 0.397 0.385 0.372 0.359 0.346 0.336 0.327 0.316 0.308 0.301 0.292 0.282 0.273 0.266 S12 ANG 85.82 82.99 80.36 78.11 75.93 73.74 71.58 69.70 67.81 65.81 63.89 62.25 60.58 58.64 56.79 55.24 53.75 51.90 50.11 48.58 47.36 45.84 44.14 42.59 41.43 40.09 38.46 37.25 35.97 34.75 33.35 32.01 30.79 29.50 27.94 27.01 MAG 0.014 0.014 0.014 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.016 0.016 0.015 0.015 0.015 0.015 0.016 0.016 0.015 0.016 0.016 0.017 0.018 0.018 0.018 0.019 0.019 S22 ANG 10.23 9.64 10.32 10.26 10.85 11.62 11.65 12.25 12.72 12.90 13.20 13.85 14.68 14.92 15.56 15.70 17.08 16.80 17.63 18.37 19.74 19.89 20.56 21.83 23.56 24.26 25.44 27.74 29.52 31.71 33.06 32.99 32.12 33.04 31.76 32.12 MAG 0.880 0.881 0.881 0.882 0.881 0.880 0.881 0.881 0.880 0.879 0.881 0.881 0.880 0.877 0.880 0.882 0.880 0.876 0.876 0.881 0.881 0.878 0.877 0.882 0.883 0.881 0.879 0.885 0.885 0.882 0.882 0.884 0.883 0.880 0.877 0.886 ANG 176.31 175.27 174.08 173.23 172.33 171.34 170.32 169.56 168.73 167.80 166.90 166.23 165.51 164.64 163.73 163.14 162.60 161.72 160.81 160.18 159.90 159.26 158.32 157.46 157.13 156.56 155.69 154.96 154.33 153.69 152.89 152.34 151.99 151.43 150.64 150.34 K MAG1 0.32 0.36 0.45 0.50 0.56 0.64 0.69 0.73 0.80 0.84 0.86 0.92 1.00 1.06 1.08 1.08 1.13 1.22 1.27 1.26 1.29 1.34 1.42 1.41 1.44 1.47 1.57 1.54 1.61 1.68 1.56 1.48 1.54 1.54 1.61 1.52 (dB) 21.74 20.93 20.24 19.66 19.12 18.65 18.17 17.77 17.41 17.04 16.75 16.46 16.22 14.46 13.97 13.70 13.00 12.19 11.72 11.55 11.19 10.76 10.32 10.16 9.88 9.56 9.04 9.03 8.55 8.13 8.21 8.14 7.76 7.53 7.12 7.23 Note: 1. Gain Calculation: MAG = |S21| |S12| (K – K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE6500379A NONLINEAR MODEL SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.68 nH LD 0.55 nH LDX 0.015 nH DRAIN RDBX 480 ohms GATE CBSX 100 pF CGS PKG 0.1 pF CDS PKG 0.1 pF RSX 0.2 ohms FET NONLINEAR MODEL PARAMETERS (1) LSX 0.001 nH SOURCE Parameters Q1 Parameters Q1 VTO -2.585 RG 0.2 VTOSC 0 RD 0.001 ALPHA 3 RS 0.001 BETA 1.28 RGMET 0 GAMMA 0 KF 0 GAMMADC(2) 0.035 AF 1 Q 1.7 TNOM 27 DELTA 0.02 XTI 3 VBI 0.6 EG 1.43 IS 1e-14 VTOTC 0 N 1 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 10e-12 CDS 0.5e-12 RDB 0.001 CBS 0 (3) CGSO 25e-12 CGDO(4) 4.5e-12 DELTA1 1 DELTA2 0.2 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD UNITS Parameter capacitance Units picofarads inductance nanohenries resistance ohms MODEL RANGE Frequency: 0.4 to 8 GHz Bias: VDS = 3 V to 8 V, ID = 300 mA to 500 mA Date: 8/03 NE6500379A APPLICATION CIRCUIT (1.93 - 1.99 GHz) VD VG J3 J4 C2 C8 C10 C3 C9 C11 P1 GND C12 C13 RFOUT J2 J1 R2R1 C6 C1 7 X C5 T C RFIN C4 U1 100637 NE6500379A-EV Contact CEL Engineering for artwork and more detailed information. .034 J4 J3 VG VD C13 C11 C9 C3 C2 L = .890 W = .010 J1 RF Input C14 C12 L = .874 W = .010 J2 RF Output C1 L = .200 W = .050 C5 C4 L = .140 W = .050 TF-100637 C2, C3 R1 C1, C14 C4 C5 C6 C7 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1100 pF CAP MURATA 0603 20 OHMS RESISTOR ROHM CASE A 47 pF CAP ATC CASE A 4.3 pF CAP ATC CASE A 5.6 pF CAP ATC CASE A 0.5 pF CAP ATC CASE A 0.8 pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1 uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE C7 Er = 4.2 H = .028" NE6500379A PARTS LIST MA101J MCR03J200 100A470CP150X 100A4R3CP150X 100A5R6CP150X 100A0R5CP150X 100A0R8CP150X TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE6500379A 703401 1250-003 2052-5636-02 C10 R6 NE650379A C6 1 4 2 1 2 1 1 1 1 2 2 2 1 1 1 2 C8 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 NE6500379A P.C.B. LAYOUT (Units in mm) FOR 79A PACKAGE 4.0 1.7 0.5 1.0 Gate 1.2 5.9 Drain Source Through hole φ 0.2 × 33 0.5 0.5 6.1 TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V GAIN AND PAE vs. OUTPUT POWER 14 60 FC = 1.96 GHz, VDS = 3 V 12 12 50 30 6 20 40 8 30 6 PAE (%) 8 Gain, GA (dB) 40 PAE (%) Gain, GA (dB) 50 10 10 20 4 4 Gain, IDSQ = 200 mA Gain, IDSQ = 600 mA PAE, IDSQ = 200 mA PAE, IDSQ = 600 mA 2 0 20 22 24 26 28 30 32 10 2 0 0 22 24 26 28 30 32 34 Output Power, POUT (dBm) GAIN AND SATURATION POWER vs. FREQUENCY GAIN AND SATURATION POWER vs. FREQUENCY 31.50 16 29.50 10 28.50 Gain, IDSQ = 100 mA Gain, IDSQ = 800 mA POUT, IDSQ = 100 mA POUT, IDSQ = 800 mA 1.96 1.98 Frequency, f (GHz) 2.00 27.50 2.02 Gain, GA (dB) 12 Saturation Power, PSAT (dBm) 30.50 1.94 0 37 POUT = 17 dBm for Gain, 30 dBm for PSAT, VDS = 6 V 14 1.92 10 36 Output Power, POUT (dBm) POUT = 10 dBm for Gain, 23 dBm for PSAT, VDS = 3 V 8 1.90 Gain, IDSQ = 200 mA Gain, IDSQ = 600 mA PAE, IDSQ = 200 mA PAE, IDSQ = 600 mA 20 34 16 Gain, GA (dB) 60 FC = 1.96 GHz, VDS = 6 V 14 36 12 35 10 8 1.90 34 Gain, IDSQ = 100 mA Gain, IDSQ = 800 mA POUT, IDSQ = 100 mA POUT, IDSQ = 800 mA 1.92 1.94 1.96 1.98 Frequency, f (GHz) 2.00 33 2.02 Saturation Power, PSAT (dBm) 14 GAIN AND PAE vs. OUTPUT POWER NE6500379A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V Third Order Intermodulation Distortion, IM3 (dBc) -15 Third Order Intermodulation Distortion, IM3 (dBc) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER FC = 1.96 GHz, VDS = 3 V -20 -25 -30 -35 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA -40 -45 23 24 25 26 27 28 29 30 31 32 THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER -20 FC = 1.96 GHz, VDS = 6 V -25 -30 -35 -40 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA -45 -50 33 23 25 Total Output Power, POUT (dBm) -35 ACPR1 885KHz -40 -40 -45 -45 ACPR (dBc) ACPR (dBc) 29 31 33 ACPR vs. OUTPUT POWER ACPR vs. OUTPUT POWER -35 -50 ACPR2 885KHz FC = 1.96 GHz, VDS = 6 V 64 CH IS95 CDMA ACPR1 885KHz -50 ACPR2 125MHz -55 -55 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA -60 -65 27 Total Output Power, POUT (dBm) FC = 1.96 GHz, VDS 64 CH IS95 CDMA 23 24 25 26 = 3V 27 28 29 30 Total Output Power, POUT (dBm) 31 32 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA -60 -65 33 23 25 27 29 31 33 35 Total Output Power, POUT (dBm) Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/04/2002 A Business Partner of NEC Compound Semiconductor Devices, Ltd.