L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES (TC = 25 °C unless otherwise noted) • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY: 40% VGDX Gate to Drain Voltage V -18 • INDUSTRY STANDARD PACKAGING VGSX DESCRIPTION The NE6501077 is a medium power GaAs MESFET designed for up to a 10 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known. Gate to Source Voltage V -12 IDS Drain Current A 9.0 IGS Gate Current mA 50 PT Total Power Dissipation W 50 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 77 The NE6501077 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. 17.5±0.5 14.3 1.0 ± 0.1 GATE SOURCE RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS VDS Drain to Source Voltage V TCH Channel Temperature °C 130 Gain Compression dB 3.0 Gate Resistance Ω 100 GCOMP RG UNITS MIN 2.5 TYP MAX 10 6.35±0.4 R1.25, 2 PLACES 10 DRAIN +0.06 0.1 -0.02 8.9±0.4 3.8 MAX 2.26 ±0.4 1.0 0.2 MAX ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER PACKAGE OUTLINE Electrical DC Characteristics Functional Characteristics SYMBOLS NE6501077 77 UNITS MIN TYP dBm 39.0 39.5 PIN = 31.0 dBm Linear Gain dB 9.5 10.5 f = 2.3 GHz Power Added Efficiency % 40 VDS = 10 V; IDSQ = 1A IDS Drain Source Current A 2.0 RG = 100Ω IDSS Saturated Drain Current A 2.0 4.5 7.0 VDS = 2.5 V; VGS = 0 V VP Pinch-off Voltage V -3.5 -2.0 -0.5 VDS = 2.5 V; IDS = 15 mA gm Transconductance RTH Thermal Resistance POUT GL ηADD CHARACTERISTICS 4.0 MIN BOTH LEADS Power Out at Fixed Input Power mS 2600 °C/W 2.5 MAX TEST CONDITIONS VDS = 2.5 V; IDS = 2 A 3.0 Channel to Case California Eastern Laboratories NE6501077 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j 50 j 25 +90˚ j 100 S11 4.05 GHz S22 4.05 GHz +60˚ +120˚ S21 0.05 GHz j10 +150˚ 0 +30˚ S21 4.05 GHz ±180˚ S22 0.05 GHz -j 10 S12 0.05 GHz S12 4.05 GHz -150˚ S11 0.05 GHz -j 25 -j 100 0˚ -30˚ -60˚ -120˚ -j 50 S21 MAG: 4.0 / DIV., 20.0 FS S12 MAG: 0.02 / DIV., 0.1 FS -90˚ VDS = 10.0 V, IDS = 1000 mA FREQUENCY (GHz) S11 MAG 0.05 0.10 0.20 0.25 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 0.984 0.974 0.970 0.973 0.971 0.969 0.968 0.976 0.968 0.962 0.952 0.953 0.954 S21 S12 ANG MAG ANG -76.400 -115.700 -146.600 -154.100 -166.400 -170.700 176.000 167.400 159.700 151.500 143.100 134.700 125.200 18.696 12.798 7.261 5.934 3.794 3.049 1.582 1.124 0.894 0.778 0.705 0.674 0.673 140.100 120.500 103.200 98.700 90.100 86.800 72.400 60.100 47.600 35.000 21.800 8.700 -5.500 MAG 0.006 0.006 0.007 0.008 0.008 0.008 0.010 0.015 0.018 0.024 0.031 0.039 0.051 S22 K ANG MAG 23.700 28.600 22.000 21.500 25.900 26.100 35.500 39.700 41.500 37.500 29.500 21.300 12.000 0.812 -177.700 0.840 -178.100 0.857 179.600 0.862 178.600 0.862 176.400 0.862 175.500 0.856 169.900 0.865 165.100 0.850 158.700 0.850 151.700 0.836 144.300 0.825 137.300 0.800 130.400 ANG MAG1 (dB) -0.320 0.036 0.212 0.251 0.488 0.593 0.979 0.874 1.088 1.081 1.100 0.940 0.761 34.936 33.290 30.159 28.703 26.760 25.811 21.992 18.747 15.156 13.368 11.639 12.376 11.204 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 01/14/2000