NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS (Units in mm) • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS 1.5 ± 0.2 4.2 Max Source • HIGH OUTPUT POWER: 30 dBm TYP with 5.0 V Vdc 27 dBm TYP with 3.5 V Vdc • LOW THERMAL RESISTANCE: 30°C/W Gate 0.4 ± 0.15 0.2 ± 0.1 3.6 ± 0.2 0.9 ± 0.2 NEC's NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. (Bottom View) TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC SYMBOLS POUT GL ηADD ID CHARACTERISTICS UNITS Output Power Linear Gain1 MIN 1.2 Max 0.8 Max 5.7 Max DESCRIPTION Drain 1.0 Max 4.4 Max X 8 Drain 0.8 ± 0.15 H 5.7 Max 0.6 ± 0.15 • HIGH LINEAR GAIN: 12 dB TYP at 1.9 GHz T Source Gate TYP dBm 29.5 dB 12.0 Power Added Efficiency % 58 Drain Current mA 350 MAX = 25°C) TEST CONDITIONS f = 1.9 GHz, VDS = 5 V PIN = +15 dBm, RG = 1 k Ω, IDSQ = 50 mA (RF OFF) Note: 1. PIN = 0 dBm. ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER NE651R479A PACKAGE OUTLINE SYMBOLS CHARACTERISTICS 79A UNITS POUT Output Power dBm GL Linear Gain1 dB Power Added Efficiency % ηADD ID IDSS VP BVGD RTH Drain Current MIN 26.0 mA Pinch-Off Voltage V -2.0 V 12 °C/W TEST CONDITIONS f = 1.9 GHz, VDS =3.5 V PIN = +15 dBm, RG = 1 k Ω, IDSQ = 50 mA (RF OFF)2 27.0 60 220 A Thermal Resistance, Channel to Case MAX 12.0 52 Saturated Drain Current Gate to Drain Break Down Voltage TYP 0.7 VDS = 2.5 V, VGS = 0 V -0.4 VDS = 2.5 V, ID = 14 mA IGD = 14 mA 30 50 Notes: 1. PIN = 0 dBm. 2. DC performance is 100% tested. Wafers are sample tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for sample lot. California Eastern Laboratories NE651R479A TYPICAL 3.5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC SYMBOLS POUT GL ηADD ID CHARACTERISTICS UNITS Output Power MIN TYP dBm 27.0 1 dB 14.0 Power Added Efficiency % 60 Drain Current mA 230 Linear Gain MAX = 25°C) TEST CONDITIONS f = 900 MHz, VDS =3.5 V PIN = +13 dBm, RG = 1 k Ω, IDSQ = 50 mA (RF OFF) ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) RECOMMENDED OPERATING LIMITS SYMBOLS SYMBOL PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 8 VGS Gate to Source Voltage V -4 IDS Drain Current A 1.0 IGF Gate Forward Current mA 10 IGR Gate Reverse Current mA 10 PT Total Power Dissipation2 W 2.5 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to +150 VDS GCOMP TCH PARAMETER Drain to Source Voltage V Gain Compression1 dB 3.0 Channel Temperature °C +125 3.5 Note: 1. Recommended maximum gain compression is 3.0 dB at VDS = 4.2 to 5.5 V. ORDERING INFORMATION PART NUMBER Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm double copper clad epoxy glass PWB. TA = +85°C UNITS MIN TYP MAX NE651R479A-T1-A NE651R479A-A Note: 1. Embossed Tape, 12 mm wide. QTY 1 kpcs/Reel Bulk, 100 Pcs. Min. 6.0 NE651R479A TYPICAL PERFORMANCE CURVES (TA = 25°C) 1.00 1.20 0.80 0.90 0.60 0.60 0.40 0.30 0.20 0.00 0.00 100 -1.20 5 Total Power Dissipation, PT (W) 1.50 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Drain Current, ID (A) Transconductance, Gm (mS) TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE 4 RTH = 50°C/W 3 2 1 0 25 Gate Voltage, VG (V) 150 MAXIMUM AVAILABLE GAIN vs. FREQUENCY 1.5 1.00 VGS = 0V 0.75 -0.2V 0.5 -0.4V -0.6V 0.25 -0.8V -1.0V 1 2 3 4 Drain Voltage, VD (V) 5 6 Maximum Available Gain, GMAG (dB) 30.0 1.25 Drain Current, ID (A) 100 Case/Circuit Temperature (TC)˚C DRAIN CURRENT vs. DRAIN VOLTAGE 0 0 50 25.0 2.2 V, 50 mA 4.6 V, 100 mA 20.0 3.5 V, 50 mA 15.0 10.0 5.0 0.1 0.2 0.5 1.0 Frequency, f (GHz) 2.0 4.0 NE651R479A TYPICAL SCATTERING PARAMETERS (TA = 25˚C) j50 -20 j25 j100 -22.5 4.0 4.0 S12 -26 j10 -32 0 S22 10 25 50 100 0.5 S21 S11 8 -j10 0.5 14 17.5 -j25 -j100 20 Coordinates in Ohms Frequency in GHz VD = 5 V, ID = 100 mA -j50 VD = 5 V, ID = 100 mA FREQUENCY S11 S21 S12 S22 K GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.6 3.7 3.8 3.9 4.0 0.905 0.905 0.904 0.904 0.904 0.903 0.903 0.903 0.902 0.902 0.901 0.900 0.900 0.899 0.898 0.898 0.897 0.896 0.896 0.895 0.895 0.894 0.894 0.893 0.892 0.891 0.890 0.889 0.889 0.888 0.887 0.886 0.886 0.885 0.885 0.882 -171.35 -176.45 179.28 172.25 172.25 169.17 166.26 163.57 160.94 158.40 155.94 153.50 151.13 148.74 146.42 144.10 141.78 139.45 137.20 134.95 132.69 130.42 128.13 125.84 123.53 121.12 118.74 116.40 113.93 111.57 109.17 106.64 1.04.11 101.52 98.85 95.89 7.390 6.174 5.310 4.650 4.144 3.729 3.393 3.115 2.878 2.675 2.497 2.344 2.207 2.087 1.978 1.882 1.794 1.714 1.641 1.575 1.514 1.458 1.406 1.360 1.315 1.273 1.237 1.199 1.167 1.134 1.105 1.078 1.052 1.027 1.005 0.985 85.67 81.57 77.91 74.54 71.29 68.22 65.17 62.32 59.48 56.63 53.91 51.18 48.51 45.82 43.18 40.54 37.96 35.31 32.77 30.22 27.72 25.19 22.65 20.17 17.71 15.17 12.88 10.24 7.72 5.26 279 0.35 -2.06 -4.48 -6.81 -9.16 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.032 0.032 0.032 3.68 1.08 -0.70 -2.57 -4.06 -5.54 -7.10 -8.31 -9.72 -11.05 -12.24 -13.54 -14.55 -16.11 -17.19 -18.30 -19.09 -20.36 -21.58 -22.87 -24.28 -25.45 -26.78 -27.62 -29.24 -30.07 -31.40 -31.97 -33.46 -34.38 -35.71 -37.09 -38.46 -39.84 -40.94 -42.41 0.664 0.667 0.669 0.669 0.670 0.670 0.671 0.672 0.672 0.673 0.674 0.675 0.675 0.676 0.677 0.679 0.680 0.680 0.682 0.684 0.686 0.687 0.689 0.690 0.693 0.695 0.699 0.699 0.703 0.704 0.708 0.711 0.715 0.719 0.725 0.734 -178.52 178.06 175.09 172.45 170.01 167.69 165.50 163.46 161.46 159.54 157.65 155.81 154.03 152.22 150.61 148.90 147.27 145.62 144.10 142.52 141.08 139.60 138.08 136.71 135.40 133.97 132.83 131.33 130.05 128.87 127.72 126.68 125.68 124.84 124.23 123.96 MAG1 (dB) 0.22 0.26 0.31 0.36 0.40 0.45 0.49 0.54 0.59 0.63 0.68 0.73 0.77 0.82 0.87 0.92 0.97 1.02 1.06 1.11 1.14 1.92 1.23 1.28 1.32 1.37 1.45 1.47 1.49 1.54 1.57 1.61 1.62 1.60 1.61 1.63 23.77 22.99 22.34 21.76 21.26 20.80 20.39 20.02 19.68 19.36 19.06 18.79 18.52 18.28 18.05 17.62 17.62 16.50 15.73 15.06 14.60 14.07 13.69 13.25 12.90 12.51 12.17 11.83 11.63 11.30 11.07 10.84 10.68 10.51 10.40 10.25 Note: 1. Gain calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE651R479A TYPICAL SCATTERING PARAMETERS (TA = 25˚C) +90˚ j50 +120˚ 4.0 j25 +60˚ j100 0.5 4.0 S21 +150˚ +30˚ j10 S22 10 0 0.5 25 50 100 +180˚ +0˚ 0.5 4.0 S11 S12 0.5 4.0 -j10 -30˚ -150˚ -j25 -j100 Coordinates in Ohms Frequency in GHz VD = 3.5 V, ID = 50 mA -j50 -60˚ -120˚ -90˚ VD = 3.5 V, ID = 50 mA FREQUENCY S11 S21 S12 S22 K GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 -168.01 -173.64 -178.28 177.73 174.20 170.95 167.90 165.11 162.38 159.77 157.25 154.75 152.33 149.91 147.55 145.21 142.87 140.51 138.25 135.98 133.71 131.45 129.14 126.84 124.54 122.13 119.76 117.42 114.95 112.59 110.20 107.68 105.16 102.57 99.92 97.00 6.49 5.43 4.68 4.10 3.65 3.29 2.99 2.75 2.54 2.36 2.20 2.07 1.95 1.84 1.74 1.66 1.58 1.51 1.44 1.39 1.33 1.28 1.23 1.19 1.15 1.12 1.08 1.05 1.02 0.99 0.97 0.94 0.92 0.90 0.88 0.86 86.49 82.00 78.02 74.39 70.90 67.60 64.34 61.32 58.30 55.29 52.40 49.51 46.67 43.82 41.04 38.26 35.55 32.76 30.08 27.39 24.76 22.10 19.43 16.80 14.23 11.57 9.15 6.40 3.77 1.18 -1.40 -3.98 -6.50 -9.02 -11.46 -13.94 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 2.44 -0.91 -3.46 -5.97 -8.08 -10.18 -12.21 -14.08 -15.97 -17.77 -19.54 -21.34 -22.87 -24.84 -26.40 -28.02 -29.38 -31.08 -32.73 -34.35 -36.08 -37.68 -39.43 -40.80 -42.57 -44.05 -45.84 -46.80 -48.59 -49.84 -51.37 -53.04 -54.52 -56.08 -57.48 -59.08 0.63 0.63 0.63 0.63 0.63 0.63 0.64 0.64 0.64 0.64 0.64 0.64 0.64 0.64 0.65 0.65 0.65 0.65 0.65 0.66 0.66 0.66 0.66 0.66 0.67 0.67 0.68 0.68 0.68 0.68 0.69 0.69 0.70 0.70 0.71 0.72 -173.92 -177.95 178.68 175.74 173.09 170.63 168.31 166.20 164.15 162.17 160.27 158.40 156.62 154.81 153.20 151.49 149.87 148.24 146.74 145.17 143.74 142.27 140.78 139.41 138.12 136.69 135.56 134.07 132.79 131.61 130.47 129.41 128.40 127.55 126.90 126.57 MAG1 (dB) 0.17 0.21 0.25 0.29 0.32 0.36 0.40 0.43 0.47 0.50 0.56 0.60 0.64 0.67 0.72 0.77 0.81 0.86 0.89 0.93 0.96 1.03 1.05 1.10 1.13 1.20 1.22 1.27 1.29 1.34 1.36 1.40 1.41 1.44 1.44 1.45 21.59 20.82 20.17 19.59 19.09 18.64 18.23 17.86 17.51 17.19 16.99 16.72 16.46 16.21 15.98 15.86 15.65 15.45 15.26 15.08 14.91 13.82 13.24 12.64 12.17 11.61 11.38 10.94 10.71 10.34 10.14 9.86 9.67 9.47 9.34 9.20 Note: 1. Gain calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE651R79A APPLICATION CIRCUIT (2.50 - 2.70 GHz) VG VD GND J4 J3 C2 C8 C10 C3 C9 C11 P1 GND C12 C13 J1 J2 RFOUT C1 8 X R1 C5 T H RFIN C4 C6 U1 NE65XXX79A-EV 100637 Contact CEL Engineering for artwork and more detailed information. .034 J4 J3 VD VG C13 C11 J1 RF Input C9 C3 L = .890 W = .010 C2 C8 C10 C12 R6 NE651R479A C5 J2 RF Output C4 L = .280 W = .050 1 L = .874 W = .010 TF-100637 L = .260 W = .050 C1 TEST CIRCUIT BLK 4 15 2-56 X 3/16 PHILLIPS PAN HEAD 14 C2, C3 CASE 1 100 pF CAP MURATA 13 MCR03J201 R1 0603 200 OHM RESISTOR ROHM 12 100A5R1CP150X C1, C5 CASE A 5.1 pF CAP ATC 11 1 100A002CP150X C4 CASE A 2.0 pF CAP ATC 10 1 100A1R5JP150X C6 CASE A 1.5 pF CAP ATC 9 2 491A105K025AS-X C12, C13 CASE A 1uF KEMET 8 2 GRM40X7R104K025BL C10, C11 0805 1uF CAP MURATA 7 2 GRM40C0G102J050BD C8, C9 0805 1000 pF CAP MURATA 6 1 NE6510179A U1 IC NEC 5 1 703401 P1 GROUND LUG CONCORD 4 1 1250-003 J3, J4 FEEDTHRU MURATA 3 1 2052-5636-02 J1, J2 FLANGE MOUNT JACK RECEPTACLE 2 2 FD-100637 PCB NE6500379A-EVAL FABRICATION DRAWING 1 2 MA101J 1 2 NE651R79A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3.5 V and VDS = 5 V GAIN AND SATURATED POWER vs. FREQUENCY GAIN AND SATURATED POWER vs. FREQUENCY 13 27 12 11 Gain (db) 3.5 V at 50 mA Gain (db) 3.5 V at 250 mA POUT (db) 3.5 V at 50 mA POUT (db) 3.5 V at 250 mA 9 8 1.9 1.92 1.94 1.96 1.98 2.00 26 14 13 12 11 8 1.9 50 Gain, GA (dB) 40 30 20 FC = 1.96 GHz, VDS = 3.5 V 4 2 0 10 70 50 14 12 Gain, IDSQ = 50 mA PAE, IDSQ = 50 mA Gain, IDSQ = 100 mA PAE, IDSQ = 100 mA Gain, IDSQ = 250 mA PAE, IDSQ = 250 mA 10 8 6 4 0 -10 -20 -30 -40 -50 IDSQ = 50 mA IDSQ = 100 mA IDSQ = 250 mA -60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Total Output Power, POUT (dBm) 30 20 0 10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Output Power, POUT (dBm) Third Order Intermodulation Distortion, IM3 (dBc) Third Order Intermodulation Distortion, IM3 (dBc) THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER 40 FC = 1.96 GHz, VDS = 5 V 2 Output Power, POUT (dBm) 10 2.02 60 0 FC = 1.96 GHz, POUT = Each Tone VDS = 3.5 V 2.00 16 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 20 1.98 18 Gain, GA (dB) 60 16 6 1.96 20 Power Added Efficiency, PAE (%) 18 8 1.94 POWER ADDED EFFICIENCY& GAIN vs. OUTPUT POWER 70 10 1.92 28 Frequency, f (GHz) POWER ADDED EFFICIENCY& GAIN vs. OUTPUT POWER Gain, IDSQ = 50 mA PAE, IDSQ = 50 mA Gain, IDSQ = 100 mA PAE, IDSQ = 100 mA Gain, IDSQ = 250 mA PAE, IDSQ = 250 mA 29 Gain (db) 5 V at 50 mA Gain (db) 5 V at 250 mA POUT (db) 5 V at 50 mA POUT (db) 5 V at 250 mA 9 25 Frequency, f (GHz) 14 30 10 2.02 20 31 THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER 20 10 FC = 1.96 GHz, POUT = Each Tone VDS = 5 V 0 -10 -20 -30 -40 IDSQ = 50 mA IDSQ = 100 mA IDSQ = 250 mA -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Total Output Power, POUT (dBm) Power Added Efficiency, PAE (%) 10 32 15 Saturated Power, POUT (dBm) 28 14 16 Gain, G (dB) 15 Saturated Power, POUT (dBm) 29 16 12 33 17 17 Gain, G (dB) 18 30 18 NE651R479A OUTPUT POWER vs. INPUT POWER 34 Test Condition: Circuit optimized for P-2dB from 2.64 to 2.69 GHz Instantaneous Bandwidth when biasing at 5 V 50 mA Output Power, POUT (dBm) 32 30 28 26 24 20 100 mA 200 mA 350 mA 50 mA 150 mA 300 mA 18 16 8 10 12 14 16 18 20 22 Input Power, PIN (dBm) 24 26 28 Third Order Intermodulation Distortion, IM3 (dBc) TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 5 V, f = 2.66 GHz THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER -20 Test Condition: Circuit optimized for P-2dB from 2.64 to 2.69 GHz Instantaneous Bandwidth when biasing at 5 V 50 mA -25 -30 -35 -40 -45 50 mA 150 mA 300 mA 100 mA 200 mA 350 mA -50 16 18 20 22 24 26 Total Output Power, POUT (dBm) 28 NE651R479A RECOMMENDED P.C.B. LAYOUT (Units in mm) 4.0 1.7 Drain 5.9 Gate 1.2 1.0 0.5 Source through hole ∅ 0.2X33 0.5 0.5 6.1 RECOMMENDED SOLDERING CONDITIONS1 This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your CEL sales representative. SOLDERING METHOD Infrared Reflow SOLDERING CONDITIONS Package peak temperature: 235 ˚C or below RECOMMENDED CONDITION SYMBOL IR35-00-2 Time: 30 seconds or less (at 210 ˚C) Count: 2, Exposure limit: none Partial Heating PIN temperature: 260 ˚C Time: 5 seconds or less (per pin row) Exposure limit: none Note: 1. Caution: Do not use different soldering methods together (except for partial heating). - NE651R479A NONLINEAR MODEL DRAIN SCHEMATIC Ldpkg L=0.001 nH GATE Ld L=0.55 nH Q1 Lspkg L=0.001 nH Cdspkg C=0.1 pF Lg L=1.45 nH Cdspkg C=0.1 pF FET NONLINEAR MODEL PARAMETERS Parameters VTO VTOSC ALPHA BETA GAMMA Q1 Parameters Q1 0.9255 RG 1.0 1.5 RS 0.05 KF 0 0 0.964 0 GAMMADC(2) 0.002 Q DELTA VBI RIS RID 1.43 1 BETATCE 0 0 FFE XTI VTOTC 0.2e-12 CBS 100e-12 RDB 0 1 14e-12 CGDO 1.1e-12 0.3 DELTA2 0.2 (4) DELTA1 0.5 Infinity UNITS Parameter capacitance resistance 60 CGSO(3) VBR 3 30e-12 CDS FC 1 EG 0 0 TAU AF 0 27 1e-16 N RGMET SOURCE 0.2 TNOM 0.6 IS 1.5 RD Lspkg L=0.001 nH (1) inductance Units picofarads nanohenries ohms MODEL RANGE Frequency: 0.5 to 4 GHz Bias: VDS = 2.2 V to 4.6 V, ID = 50 mA to 350 mA Date: 6/02/2003 (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD 11/02/2006 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.