NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • 4-pin lead-less minimold (M14, 1208 package) ORDERING INFORMATION Part Number Order Number NESG3032M14 NESG3032M14-A Package Quantity 4-pin lead-less minimold 50 pcs • 8 mm wide embossed taping (M14, 1208 package) (Non reel) • Pin 1 (Collector), Pin 4 (Emitter) face the (Pb-Free) NESG3032M14-T3 NESG3032M14-T3-A Supplying Form perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 12.0 V Collector to Emitter Voltage VCEO 4.3 V Emitter to Base Voltage VEBO 1.5 V IC 35 mA 150 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10575EJ01V0DS (1st edition) Date Published July 2005 CP(K) © NEC Compound Semiconductor Devices, Ltd. 2005 NESG3032M14 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA VCE = 2 V, IC = 6 mA 220 300 380 − ⏐S21e⏐ VCE = 2 V, IC = 15 mA, f = 2.0 GHz 15.0 17.5 − dB Noise Figure NF VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt − 0.60 0.85 dB Associated Gain Ga VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt − 17.5 − dB VCB = 2 V, IE = 0 mA, f = 1 MHz − 0.15 0.25 pF 17.5 20.5 − dB DC Current Gain hFE Note 1 RF Characteristics 2 Insertion Power Gain Reverse Transfer Capacitance Maximum Stable Power Gain Cre Note 2 Note MSG VCE = 2 V, IC = 15 mA, f = 2.0 GHz 3 Gain 1 dB Compression Output Power PO (1 dB) VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt − 12.5 − dBm 3rd Order Intermodulation Distortion Output Intercept Point OIP3 VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt − 24.0 − dBm Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank FB Marking zN hFE Value 220 to 380 S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ 2 Data Sheet PU10575EJ01V0DS NESG3032M14 PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) (UNIT: mm) 1.0±0.05 0.15±0.05 2 0.11+0.1 –0.05 1 zN 4 0.8 0.5±0.05 1.2+0.07 –0.05 3 0.8+0.07 –0.05 PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base NC (Connected with Pin 2) Data Sheet PU10575EJ01V0DS 3 NESG3032M14 When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of July, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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M8E 00. 4 - 0110 4 Data Sheet PU10575EJ01V0DS NESG3032M14 For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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