CEL NESG3033M14-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3033M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• This product is improvement of ESD of NESG3032M14.
• 4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
Part Number
Order Number
NESG3033M14
NESG3033M14-A
Package
Quantity
4-pin lead-less minimold
50 pcs
• 8 mm wide embossed taping
(M14, 1208 PKG)
(Non reel)
• Pin 1 (Collector), Pin 4 (Emitter) face the
(Pb-Free)
NESG3033M14-T3 NESG3033M14-T3-A
Supplying Form
perforation side of the tape
10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Ratings
Unit
5.0
V
4.3
V
Note 1
12
mA
Collector Current
IC
35
mA
Total Power Dissipation
Note 2
150
mW
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Symbol
VCBO
Note 1
VCEO
IB
Ptot
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Notes 1. VCBO and IB are limited by the permissible current of the protection element.
2. Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10640EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
2006
NESG3033M14
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Input Power
Pin
−
−
0
dBm
Base Feedback Resister
Rb
−
−
100
kΩ
Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the
ESD protection element is turned on when recommended range of motion in the above table is exceeded.
However, there is no influence of reliability, including deterioration.
Rb
Bias
Choke
2
Data Sheet PU10640EJ01V0DS
NESG3033M14
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
100
nA
VCE = 2 V, IC = 6 mA
220
300
380
−
⏐S21e⏐
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
15.0
17.5
−
dB
Noise Figure
NF
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.60
0.85
dB
Associated Gain
Ga
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
−
17.5
−
dB
VCB = 2 V, IE = 0 mA, f = 1 MHz
−
0.15
0.25
pF
17.5
20.5
−
dB
DC Current Gain
hFE
Note 1
RF Characteristics
2
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
MSG
Note
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
3
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
−
12.5
−
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
−
24.0
−
dBm
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
Rank
FB
Marking
zL
hFE Value
220 to 380
Data Sheet PU10640EJ01V0DS
3
NESG3033M14
PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm)
1.0±0.05
0.15±0.05
2
0.5±0.05
0.11+0.1
–0.05
1
zL
4
0.8
1.2+0.07
–0.05
3
0.8+0.07
–0.05
PIN CONNECTIONS
1.
2.
3.
4.
4
Collector
Emitter
Base
NC (Connected with Pin 2)
Data Sheet PU10640EJ01V0DS
NESG3033M14
• The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
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M8E 02. 11-1
Data Sheet PU10640EJ01V0DS
5
NESG3033M14
For further information, please contact
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected]
Hong Kong Head Office TEL: +852-3107-7303
FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
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TEL: +82-2-558-2120
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH
http://www.eu.necel.com/
TEL: +49-211-6503-0
FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500
FAX: +1-408-988-0279
Compound Semiconductor Devices Division
NEC Electronics Corporation
URL: http://www.ncsd.necel.com/
0604
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
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2003/11/EC Restriction on Penta and Octa BDE.
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that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
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go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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