NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product is improvement of ESD of NESG3032M14. • 4-pin lead-less minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number Order Number NESG3033M14 NESG3033M14-A Package Quantity 4-pin lead-less minimold 50 pcs • 8 mm wide embossed taping (M14, 1208 PKG) (Non reel) • Pin 1 (Collector), Pin 4 (Emitter) face the (Pb-Free) NESG3033M14-T3 NESG3033M14-T3-A Supplying Form perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Ratings Unit 5.0 V 4.3 V Note 1 12 mA Collector Current IC 35 mA Total Power Dissipation Note 2 150 mW Collector to Base Voltage Collector to Emitter Voltage Base Current Symbol VCBO Note 1 VCEO IB Ptot Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Notes 1. VCBO and IB are limited by the permissible current of the protection element. 2. Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10640EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) 2006 NESG3033M14 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit Input Power Pin − − 0 dBm Base Feedback Resister Rb − − 100 kΩ Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the ESD protection element is turned on when recommended range of motion in the above table is exceeded. However, there is no influence of reliability, including deterioration. Rb Bias Choke 2 Data Sheet PU10640EJ01V0DS NESG3033M14 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA VCE = 2 V, IC = 6 mA 220 300 380 − ⏐S21e⏐ VCE = 2 V, IC = 15 mA, f = 2.0 GHz 15.0 17.5 − dB Noise Figure NF VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt − 0.60 0.85 dB Associated Gain Ga VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt − 17.5 − dB VCB = 2 V, IE = 0 mA, f = 1 MHz − 0.15 0.25 pF 17.5 20.5 − dB DC Current Gain hFE Note 1 RF Characteristics 2 Insertion Power Gain Reverse Transfer Capacitance Maximum Stable Power Gain Cre Note 2 MSG Note VCE = 2 V, IC = 15 mA, f = 2.0 GHz 3 Gain 1 dB Compression Output Power PO (1 dB) VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt − 12.5 − dBm 3rd Order Intermodulation Distortion Output Intercept Point OIP3 VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt − 24.0 − dBm Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank FB Marking zL hFE Value 220 to 380 Data Sheet PU10640EJ01V0DS 3 NESG3033M14 PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm) 1.0±0.05 0.15±0.05 2 0.5±0.05 0.11+0.1 –0.05 1 zL 4 0.8 1.2+0.07 –0.05 3 0.8+0.07 –0.05 PIN CONNECTIONS 1. 2. 3. 4. 4 Collector Emitter Base NC (Connected with Pin 2) Data Sheet PU10640EJ01V0DS NESG3033M14 • The information in this document is current as of September, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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M8E 02. 11-1 Data Sheet PU10640EJ01V0DS 5 NESG3033M14 For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ 0604 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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