CEL UPA802T_98

NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
•
UPA802T
OUTLINE DIMENSIONS (Units in mm)
SMALL PACKAGE STYLE:
2 NE681 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.4 dB TYP at 1 GHz
HIGH GAIN:
|S21E|2 = 12 dB TYP at 1 GHz
HIGH GAIN BANDWIDTH: fT = 7 GHz
LOW CURRENT OPERATION
PACKAGE OUTLINE S06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
0.65
1
6
2
5
3
4
2.0 ± 0.2
DESCRIPTION
0.2 (All Leads)
1.3
NEC's UPA802T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
0.9 ± 0.1
0.7
+0.10
0.15 - 0.05
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
0 ~ 0.1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UPA802T
S06
UNITS
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE1
Forward Current Gain at VCE = 3 V, IC = 7 mA
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
Cre2
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|2
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
dB
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
NF
hFE1/hFE2
hFE Ratio: hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
MIN
TYP
MAX
0.8
0.8
70
100
4.5
7.0
10
12
240
0.9
1.4
1.7
0.85
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA802T-T1, 3K per reel.
California Eastern Laboratories
UPA802T
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
20
VCEO
Collector to Emitter Voltage
V
10
Emitter to Base Voltage
VEBO
IC
Collector Current
PT
Total Power Dissipation
1 Die
2 Die
V
1.5
mA
65
mW
mW
110
200
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
Total Power Dissipation, PT (mW)
SYMBOLS
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
2
200
El
Pe
em
rE
en
ts
lem
in
en
To
t
al
t
100
0
50
100
150
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
25
20
160 µA
20
Collector Current, IC (mA)
Collector Current, IC (mA)
VCE = 3 V
140 µA
15
120 µA
100 µA
10
80 µA
60 µA
40 µA
5
10
lB=20 µA
0
0.5
0
1.0
1.0
Collector to Emitter Voltage, VCE (V)
Base to Emitter Voltage, VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
200
5.0
Feed Back Capacitance, CRE (pF)
VCE = 3 V
DC Current Gain, hFE
0.5
100
50
20
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
10
0.5
1
5
10
Collector Current, IC (mA)
50
1
2
5
10
20
Collector to Base Voltage, VCB (V)
50
UPA802T
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
15
VCE = 3 V
f = 1 GHz
Insertion Power Gain, IS21eI2 (dB)
Gain Bandwidth Product, fT (GHz)
10
8
6
4
2
0
0.5
1
5
10
10
5
0
0.5
50
1
5
10
Collector Current, IC (mA)
INSERTION POWER GAIN vs.
FREQUENCY
NOISE FIGURE vs.
COLLECTOR CURRENT
5
VCE = 3 V
f = 1 GHz
VCE = 3 V
lc = 7 mA
20
Noise Figure (dB)
4
15
10
5
0
0.1
50
Collector Current, IC (mA)
25
Insertion Power Gain, IS21eI2 (dB)
VCE = 3 V
f = 1 GHz
3
2
1
0
0.2
0.5
1.0
Frequency, f (GHz)
2.0
5.0
0.5
1.0
5.0
10
Collector Current, IC (mA)
50
UPA802T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
60°
150°
30°
j10
S11
3.0 GHz
0
10
S12
3.0 GHz
25
50
-j10
S22
0.1 GHz
S11
0.1 GHz
100
180°
S22
3.0 GHz
S21
S12 3.0 GHz
0.1 GHz
0°
-150°
Coordinates in Ohms
Frequency in GHz
VCE = 1 V, IC = 1 mA
ZO = 50 Ω
-j100
-j25
S21
0.1 GHz
-j50
-30°
-120°
-60°
-90°
UPA802T(Q1)
VCE = 1 V, IC = 1 mA
FREQUENCY
S11
S21
S12
S22
K
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
0.958
0.928
0.848
0.760
0.687
0.633
0.596
0.569
0.551
0.540
0.531
0.526
0.520
0.520
0.517
0.520
-15.16
-28.69
-55.75
-78.46
-97.04
-112.40
-125.48
-136.93
-147.13
-156.65
-165.70
-174.27
177.45
169.16
161.23
153.22
3.187
3.093
2.811
2.474
2.147
1.863
1.654
1.479
1.341
1.225
1.132
1.055
0.992
0.930
0.880
0.836
166.69
156.52
136.55
120.48
107.67
97.49
88.81
81.45
75.09
69.42
64.10
59.52
55.07
51.37
47.57
44.36
0.032
0.062
0.108
0.136
0.150
0.157
0.157
0.155
0.150
0.146
0.140
0.136
0.133
0.132
0.135
0.142
79.93
71.38
55.84
44.42
36.37
30.81
27.29
25.10
24.63
24.53
26.86
29.55
34.37
39.26
45.21
50.87
0.988
0.963
0.888
0.814
0.754
0.714
0.679
0.659
0.642
0.635
0.624
0.620
0.610
0.607
0.602
0.594
-6.58
-12.80
-22.64
-29.45
-34.20
-37.74
-40.65
-43.13
-45.30
-47.38
-49.27
-51.13
-53.10
-54.72
-56.65
-58.18
Gmag
(dB)
0.09
0.13
0.24
0.35
0.47
0.58
0.71
0.84
0.98
1.11
1.27
1.40
1.54
1.64
1.71
1.74
19.96
16.97
14.15
12.60
11.54
10.75
10.23
9.79
9.51
7.24
5.96
5.14
4.38
3.77
3.21
2.70
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
UPA802T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
60°
150°
j10
0
30°
S11
3.0 GHz
10
25
50
S22
0.1 GHz
S11
0.1 GHz
100
S22
3.0 GHz
-j10
180°
S21
0.1 GHz
S12
3.0 GHz
S21
3.0 GHz
S12
0.1 GHz
0°
-150°
Coordinates in Ohms
Frequency in GHz
VCE = 1 V, IC = 1 mA
ZO = 50 Ω
-j100
-j25
-j50
-30°
-120°
-60°
-90°
UPA802T(Q2)
VCE = 1 V, IC = 1 mA
FREQUENCY
S11
S21
S12
S22
K
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
0.957
0.931
0.856
0.770
0.697
0.646
0.611
0.590
0.579
0.575
0.574
0.576
0.576
0.580
0.579
0.581
-14.40
-28.20
-55.36
-78.82
-98.60
-115.24
-129.46
-141.68
-152.33
-161.59
-170.02
-177.47
175.74
169.40
163.57
157.88
3.197
3.113
2.858
2.541
2.222
1.934
1.718
1.533
1.383
1.258
1.158
1.071
1.002
0.938
0.884
0.839
167.02
157.17
137.29
120.96
107.64
96.85
87.54
79.60
72.70
66.56
60.84
55.92
51.22
47.30
43.32
39.98
0.030
0.059
0.103
0.132
0.147
0.154
0.154
0.153
0.148
0.144
0.137
0.131
0.126
0.124
0.124
0.128
80.47
71.80
56.14
44.20
35.41
29.00
24.60
21.50
20.19
19.08
20.45
22.10
26.20
30.61
36.59
42.78
0.989
0.966
0.894
0.819
0.756
0.710
0.670
0.645
0.623
0.615
0.600
0.594
0.580
0.578
0.572
0.563
-6.14
-12.02
-21.53
-28.30
-33.20
-37.02
-40.30
-43.31
-46.01
-49.02
-51.86
-54.76
-57.65
-60.58
-63.54
-66.31
Gmag
(dB)
0.09
0.13
0.23
0.34
0.46
0.57
0.70
0.82
0.97
1.08
1.25
1.38
1.56
1.67
1.78
1.84
20.25
17.25
14.41
12.86
11.80
11.00
10.47
10.02
9.72
7.65
6.29
5.42
4.60
4.00
3.41
2.87
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
UPA802T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
60°
150°
j10
0
30°
S11
3.0 GHz
10
S21
3.0 GHz
25
50
100
S22
0.1 GHz
-j10
S11
0.1 GHz
180°
S22
3.0 GHz
S12
3.0 GHz
S12
0.1 GHz
0°
-150°
Coordinates in Ohms
Frequency in GHz
VCE = 2.5 V, IC = 1 mA
ZO = 50 Ω
-j100
-j25
S21
0.1 GHz
-j50
-30°
-120°
-60°
-90°
UPA802T(Q1)
VCE = 2.5 V, IC = 1 mA
FREQUENCY
S11
S21
S12
S22
K
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
0.961
0.936
0.866
0.784
0.709
0.652
0.609
0.578
0.556
0.540
0.528
0.519
0.512
0.508
0.505
0.506
-13.74
-25.96
-51.02
-72.59
-90.73
-106.09
-119.38
-131.20
-141.82
-151.78
-161.28
-170.30
-179.05
172.23
163.81
155.42
3.109
3.034
2.803
2.512
2.212
1.938
1.731
1.553
1.408
1.289
1.188
1.105
1.037
0.970
0.915
0.868
167.68
158.68
140.07
124.70
112.14
102.04
93.28
85.91
79.52
73.82
68.51
63.86
59.43
55.60
51.86
48.52
0.025
0.048
0.085
0.108
0.121
0.127
0.128
0.127
0.123
0.119
0.115
0.111
0.110
0.110
0.114
0.121
81.01
73.40
58.87
47.90
40.02
34.59
31.16
29.20
28.96
29.44
32.25
35.73
41.40
47.08
53.76
59.74
0.992
0.973
0.915
0.854
0.803
0.767
0.736
0.717
0.701
0.694
0.684
0.680
0.670
0.668
0.664
0.658
-5.18
-10.17
-18.43
-24.40
-28.70
-31.93
-34.55
-36.80
-38.74
-40.60
-42.21
-43.79
-45.38
-46.67
-48.22
-49.36
Gmag
(dB)
0.09
0.12
0.23
0.33
0.45
0.56
0.70
0.83
0.97
1.11
1.28
1.42
1.56
1.66
1.71
1.72
21.01
18.03
15.20
13.65
12.61
11.83
11.31
10.88
10.59
8.33
7.00
6.13
5.34
4.70
4.12
3.60
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
UPA802T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
60°
150°
30°
j10
S21
3.0 GHz
S11
3.0 GHz
0
10
25
50
100
S22
0.1 GHz
-j10
S11
0.1 GHz
180°
S22
3.0 GHz
S12
3.0 GHz
S12
0.1 GHz
0°
-150°
Coordinates in Ohms
Frequency in GHz
VCE = 2.5 V, IC = 1 mA
ZO = 50 Ω
-j100
-j25
S21
0.1 GHz
-j50
-30°
-120°
-60°
-90°
UPA802T(Q2)
VCE = 2.5 V, IC = 1 mA
FREQUENCY
S11
S21
S12
S22
K
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
0.960
0.939
0.873
0.793
0.719
0.664
0.624
0.598
0.582
0.574
0.570
0.570
0.569
0.570
0.569
0.569
-12.87
-25.48
-50.50
-72.66
-91.93
-108.57
-123.04
-135.77
-146.93
-156.82
-165.76
-173.69
179.04
172.27
166.04
160.07
3.120
3.052
2.847
2.579
2.290
2.015
1.803
1.616
1.460
1.331
1.222
1.129
1.055
0.985
0.927
0.878
168.01
159.33
140.93
125.40
112.39
101.75
92.38
84.42
77.51
71.33
65.61
60.65
55.96
51.94
48.02
44.54
0.023
0.044
0.079
0.103
0.116
0.122
0.124
0.123
0.119
0.115
0.110
0.106
0.102
0.101
0.103
0.107
81.72
73.80
59.29
47.91
39.33
33.12
28.81
25.96
24.89
24.36
26.19
28.67
33.64
39.03
45.91
52.65
0.993
0.976
0.922
0.862
0.809
0.769
0.734
0.711
0.691
0.682
0.669
0.663
0.649
0.648
0.641
0.634
-4.73
-9.36
-17.18
-23.00
-27.36
-30.79
-33.73
-36.46
-38.85
-41.54
-44.01
-46.54
-48.97
-51.47
-53.98
-56.30
Gmag
(dB)
0.09
0.12
0.22
0.33
0.44
0.55
0.68
0.81
0.96
1.09
1.26
1.41
1.59
1.70
1.79
1.83
21.39
18.40
15.55
14.00
12.96
12.17
11.64
11.20
10.90
8.83
7.41
6.49
5.63
5.02
4.40
3.85
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
UPA802T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
S12
0.1 GHz
S21
0.1 GHz
60°
150°
j10
0
30°
S11
3.0 GHz
10
25
100
50
S22
3.0 GHz
-j10
S22
0.1 GHz
S11
0.1 GHz
S21
3.0 GHz
0°
-150°
Coordinates in Ohms
Frequency in GHz
VCE = 5 V, IC = 5 mA
ZO = 50 Ω
-j100
-j25
S12
3.0 GHz
180°
-j50
-30°
-120°
-60°
-90°
UPA802T(Q1)
VCE = 5 V, IC = 5 mA
FREQUENCY
S11
S21
S12
S22
K
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
0.824
0.738
0.566
0.457
0.395
0.358
0.335
0.318
0.309
0.300
0.294
0.290
0.288
0.289
0.290
0.295
-25.25
-47.27
-83.01
-107.67
-125.58
-139.68
-151.26
-161.37
-170.29
-178.64
173.52
166.20
159.02
151.93
145.02
138.35
13.043
11.730
8.848
6.700
5.286
4.336
3.675
3.186
2.819
2.525
2.291
2.100
1.942
1.804
1.689
1.587
159.74
143.72
120.53
106.46
97.09
90.05
84.25
79.25
74.86
70.74
66.94
63.40
59.98
56.88
53.83
50.95
0.019
0.033
0.050
0.060
0.067
0.074
0.082
0.090
0.099
0.108
0.117
0.128
0.138
0.149
0.160
0.172
76.03
65.58
54.81
52.18
52.99
55.02
57.29
59.48
61.60
63.26
64.82
65.97
67.03
67.72
68.34
68.64
0.956
0.867
0.704
0.610
0.561
0.536
0.522
0.516
0.513
0.513
0.514
0.516
0.516
0.516
0.516
0.514
-11.30
-19.95
-28.18
-30.60
-31.32
-31.84
-32.43
-33.24
-33.99
-34.99
-35.94
-36.91
-38.01
-38.86
-39.93
-40.64
Gmag
(dB)
0.15
0.27
0.50
0.70
0.86
0.99
1.08
1.14
1.19
1.22
1.23
1.24
1.24
1.24
1.23
1.23
28.42
25.47
22.47
20.51
18.97
17.66
14.80
13.17
11.94
10.89
10.00
9.23
8.52
7.89
7.33
6.78
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
UPA802T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
60°
S12
0.1 GHz
S21
0.1 GHz
150°
30°
j10
0
S11
3.0 GHz
10
25
50
100
S22
3.0 GHz
-j10
S12
3.0 GHz
S22
0.1 GHz
S21
3.0 GHz
180°
0°
S11
0.1 GHz
-150°
-j100
-j25
Coordinates in Ohms
Frequency in GHz
VCE = 5 V, IC = 5 mA
ZO = 50 Ω
-j50
-30°
-120°
-60°
-90°
UPA802T(Q2)
VCE = 5 V, IC = 5 mA
FREQUENCY
S11
S21
S12
S22
K
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
0.823
0.743
0.575
0.467
0.408
0.377
0.362
0.354
0.352
0.353
0.356
0.358
0.360
0.363
0.364
0.364
-24.36
-46.52
-82.78
-108.62
-127.86
-143.07
-155.37
-165.68
-174.22
178.37
171.97
166.50
161.52
157.00
152.78
148.84
13.414
12.139
9.280
7.075
5.599
4.595
3.896
3.376
2.977
2.666
2.416
2.210
2.038
1.893
1.770
1.663
160.23
144.45
121.05
106.49
96.62
89.14
82.94
77.52
72.75
68.30
64.18
60.30
56.62
53.22
49.89
46.72
0.017
0.030
0.046
0.055
0.062
0.068
0.075
0.082
0.090
0.098
0.107
0.115
0.125
0.135
0.145
0.156
76.18
65.94
54.57
51.23
51.37
52.88
54.71
56.53
58.55
59.82
61.15
62.13
63.09
63.71
64.24
64.58
0.959
0.877
0.717
0.621
0.568
0.537
0.518
0.506
0.497
0.492
0.488
0.485
0.480
0.479
0.477
0.473
-10.44
-18.55
-26.47
-28.79
-29.56
-30.23
-31.06
-32.27
-33.34
-35.02
-36.66
-38.36
-40.00
-41.73
-43.44
-44.93
Gmag
(dB)
0.15
0.26
0.49
0.69
0.85
0.98
1.08
1.15
1.20
1.23
1.25
1.26
1.27
1.27
1.26
1.26
28.98
26.02
23.03
21.10
19.57
18.27
15.41
13.76
12.47
11.45
10.54
9.75
9.00
8.38
7.79
7.23
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
ORDERING INFORMATION
PART NUMBER
UPA802T-T1-A
QUANTITY
3000
PACKAGING
Tape & Reel
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -12/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.