GaAs INTEGRATED CIRCUIT µPG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES • Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.) • Control voltage : Vcont = 1.5 to 2.1 V (1.8 V TYP.) • Circuit current : IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm • Output power : Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm • Gain control range : GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = −5 dBm • High efficiency : PAE = 55% TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm • High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm) APPLICATION • Power Amplifier for Bluetooth Class 1 ORDERING INFORMATION Part Number Order Number µPG2250T5N-E2 µPG2250T5N-E2-A Package 6-pin plastic TSON (Pb-Free) Marking G5C Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2250T5N-A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10639EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) 2006 µPG2250T5N PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) 2 G5C 1 3 (Bottom View) (Top View) 6 1 6 6 1 5 2 5 5 2 4 3 4 Bias Circuit 3 4 Pin No. Pin Name 1 OUTPUT/VDD3 2 N.C. 3 Vcont 4 INPUT 5 VDD1 6 VDD2 Remark Exposed pad : GND ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VDD1, 2, 3 5.0 V Control Voltage Vcont 2.4 V Circuit Current IDD 250 mA Control Current Icont 5 mA Input Power Pin +5 400 dBm Note Power Dissipation PD mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit fopt 2 400 2 450 2 500 MHz Supply Voltage VDD1, 2, 3 1.5 1.8 3.5 V Control Voltage Vcont 1.5 1.8 2.1 V Operating Frequency 2 Data Sheet PG10639EJ01V0DS µPG2250T5N ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD1, 2, 3 = 1.8 V, f = 2 450 MHz, Pout = +19 dBm, external input and output matching, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current IDD Vcont = 1.8 V, Pout = +19 dBm − 100 130 mA Control Current Icont Vcont = 1.8 V, Pout = +19 dBm − − 3 mA Vcont = 0 V, RF None − − 5 µA +19.0 +20.0 − dBm Shut Down Current Ishut down Output Power 1 Pout1 Vcont = 1.8 V, Pin = −5 dBm Output Power 2 Pout2 Vcont = 0 V, Pin = −5 dBm − −40.0 − dBm Gain Control Range GCR Vcont = 0 to 1.8 V, Pin = −5 dBm − 60 − dB Efficiency PAE Vcont = 1.8 V, Pin = −5 dBm − 55 − % 2f0 Vcont = 1.8 V, Pin = −5 dBm − 35 − dBc 2nd Harmonics Data Sheet PG10639EJ01V0DS 3 µPG2250T5N EVALUATION CIRCUIT VDD3 0.1 µF 12 nH 10 pF 6 1 OUTPUT VDD2 0.1 µF 1.5 pF 2.2 nH 5 2 VDD1 1 000 pF 3 Vcont 0.1 µF Bias Circuit 4 0.1 µF INPUT 5.6 nH The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10639EJ01V0DS µPG2250T5N TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Condition : f = 2 450 MHz, VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, with external input and output matching circuits 140 Output Power Pout (dBm), Gain (dB) 35 30 IDD Gain 120 100 25 20 80 Pout 60 15 PAE 10 40 20 5 0 –30 –20 –25 –15 –10 –5 0 0 5 Circuit Current IDD (mA), Efficiency PAE (%) OUTPUT POWER, GAIN, CIRCUIT CURRENT, EFFICIENCY vs. INPUT POWER Input Power Pin (dBm) Condition : f = 2 450 MHz, VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, Pin = −5 dBm, with external input and output matching circuits 30 140 Pout Output Power Pout (dBm) 20 120 10 100 IDD 0 80 –10 60 PAE –20 40 –30 20 –40 0 0.5 1 1.5 2 2.5 0 3 Circuit Current IDD (mA), Efficiency PAE (%) OUTPUT POWER, CIRCUIT CURRENT, EFFICIENCY vs. CONTROL VOLTAGE Control Voltage Vcont (V) Remark The graphs indicate nominal characteristics. Data Sheet PG10639EJ01V0DS 5 µPG2250T5N Condition : f = 2 450 MHz, VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, with external input and output matching circuits 2ND HARMONICS vs. OUTPUT POWER 0 2nd Harmonics 2f0 (dBc) –10 –20 –30 –40 –50 –60 –70 5 10 15 20 25 Output Power Pout (dBm) Condition : VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, with external input and output matching circuits S11-FREQUENCY S11, S22-FREQUENCY 0 –10 –20 –30 –40 m1 m5 –50 –60 –70 START 100.0 MHz m1: f = 2.450 GHz S (1,1) = 0.207/–115.086 impedance = Z0 * (0.786 – j0.307) STOP 5.100 GHz –80 –90 m5: f = 2.450 GHz dB (S (1,2)) = –54.402 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Frequency f (GHz) S21-FREQUENCY S22-FREQUENCY 40 m3 30 20 10 0 m7 –10 –20 –30 –40 m3: f = 2.450 GHz dB (S (2,1)) = 30.921 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 START 100.0 MHz Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10639EJ01V0DS m7: f = 2.450 GHz S (2,2) = 0.486/–164.104 impedance = Z0 * (0.352 – j0.123) STOP 5.100 GHz µPG2250T5N MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) MOUNTING PAD 0.3 0.2 0.5 1.0 0.5 0.3 0.5 0.3 0.3 SOLDER MASK 0.475 0.15 0.5 0.55 0.5 0.25 0.35 0.475 0.25 Solder thickness : 0.08 mm Remark The mounting pad and solder mask layouts in this document are for reference only. Data Sheet PG10639EJ01V0DS 7 µPG2250T5N PACKAGE DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) (Bottom View) (Side View) 0.3±0.07 0.2+0.07 –0.05 1.5±0.1 0.5±0.06 1.5±0.1 1.2±0.1 (Top View) 0.37+0.03 –0.05 8 0.2±0.1 Data Sheet PG10639EJ01V0DS 0.7±0.1 µPG2250T5N RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10639EJ01V0DS 9 µPG2250T5N Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of September, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 10 Data Sheet PG10639EJ01V0DS µPG2250T5N Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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