CET CEM3060

CEM3060
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V.
RDS(ON) = 11.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
D
D
D
8
7
6
5
1
S
2
S
3
S
4
G
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Units
V
Gate-Source Voltage
VGS
±20
V
ID
14
A
IDM
50
A
PD
2.5
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
50
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.April
http://www.cetsemi.com
CEM3060
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 30V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 14A
1
6.5
7.8
mΩ
VGS = 4.5V, ID =14A
8.5
11.5
mΩ
Dynamic Characteristics d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
2470
pF
325
pF
185
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
17
35
ns
5
10
ns
ns
50
100
Turn-Off Fall Time
tf
10
20
ns
Total Gate Charge
Qg
16
20
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 15V, ID = 14A,
VGS = 5V
5
nC
3
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
14
A
1.3
V
5
CEM3060
25
VGS=10,8,6,5,4V
VGS=3V
ID, Drain Current (A)
ID, Drain Current (A)
40
30
20
10
20
15
10
25 C
5
TJ=125 C
0
0.0
0.5
1.0
1.5
0
2.0
1
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Ciss
2000
1500
1000
Coss
500
Crss
0
1.2
5
10
15
20
25
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
ID=14A
VGS=10V
VDS, Drain-to-Source Voltage (V)
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
2500
1.3
4
3
2
VDS, Drain-to-Source Voltage (V)
3000
0
-55 C
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10 V =15V
DS
ID=14A
10
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEM3060
6
4
2
0
0
5
10
15
20
10
10
10
10
25
2
RDS(ON)Limit
1ms
10ms
100ms
1s
1
5
DC
0
-1
TA=25 C
TJ=150 C
Single Pulse
-2
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
2