APTM100UM65SAG Single switch Series & parallel diodes MOSFET Power Module CR1 D S Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance G D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 145 110 580 ±30 78 3250 30 50 3200 Unit V A V mΩ W A July, 2006 Q1 S Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100UM65S-AG – Rev 2 SK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C APTM100UM65SAG All ratings @ Tj = 25°C unless otherwise specified RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VRRM IRM IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 65 Min Typ 28.5 5.08 0.9 1068 Max 400 2 78 5 ±400 Unit µA mA Max Unit nC 692 VGS = 15V VBus = 500V ID = 145A R G = 0.75Ω 18 14 140 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75Ω 4.8 ns 55 Test Conditions mJ 2.9 8 mJ 3.9 Min Typ Max 200 VR=200V IF = 120A VR = 133V di/dt = 400A/µs 350 600 Tj = 125°C 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 www.microsemi.com Unit V Tj = 25°C Tj = 125°C T c = 80°C IF = 120A IF = 240A IF = 120A mΩ V nA nF 136 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 3 VGS = 10V VBus = 500V ID = 145A Series diode ratings and characteristics Symbol Characteristic Min µA A 1.15 V July, 2006 IDSS Test Conditions ns nC 2–6 APTM100UM65S-AG – Rev 2 Electrical Characteristics Symbol Characteristic APTM100UM65SAG Parallel diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Test Conditions Min VR=1000V DC Forward Current Diode Forward Voltage Reverse Recovery Time IF = 240A VR = 667V Qrr Reverse Recovery Charge di/dt = 800A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 280 350 3.04 14.4 Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I sol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Wt Package Weight 750 1000 240 2 2.2 1.7 Thermal and package characteristics To Heatsink For teminals M6 M5 2500 -40 -40 -40 3 2 Unit V Tj = 25°C Tj = 125°C Tc = 80°C IF = 240A IF = 480A IF = 240A trr Torque Max 1000 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ Typ µA A 2.5 V ns µC Max 0.038 0.46 0.23 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM100UM65S-AG – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM100UM65SAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 Single Pulse 0.1 0.05 0.005 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 360 VGS =15, 10V 7V 280 ID, Drain Current (A) 6.5V 240 200 6V 160 120 80 5.5V 40 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 TJ=25°C 160 80 TJ=125°C 5V 0 0 5 10 15 20 25 30 0 ID, DC Drain Current (A) Normalized to VGS =10V @ 72.5A 1.3 1.2 1.1 VGS=10V 1 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) V GS=20V 0.9 120 80 40 0.8 0 0 80 160 240 320 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4–6 APTM100UM65S-AG – Rev 2 I D, Drain Current (A) 320 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=72.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by R DSon 100 1ms 10 10ms Single pulse TJ=150°C TC=25°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 14 ID=145A TJ =25°C 12 10 VDS=200V VDS=500V V DS =800V 8 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 300 600 900 1200 1500 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100UM65S-AG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM65SAG APTM100UM65SAG Delay Times vs Current Rise and Fall times vs Current 100 160 V DS =670V RG =0.75Ω T J=125°C L=100µH 80 120 tr and tf (ns) td(on) and td(off) (ns) t d(off) V DS=670V RG=0.75Ω T J=125°C L=100µH 80 40 t d(on) 60 40 tr 20 0 0 50 94 138 182 226 270 50 94 ID, Drain Current (A) 10 Eon Switching Energy (mJ) Switching Energy (mJ) VDS=670V RG=0.75Ω TJ=125°C L=100µH 12 Eoff 8 6 4 2 0 18 Eoff 14 Eon 10 6 94 138 182 226 270 E off 0 ID, Drain Current (A) 1 2 3 4 5 6 7 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 300 IDR, Reverse Drain Current (A) 1000 250 Frequency (kHz) V DS=670V ID=145A T J=125°C L=100µH 22 2 50 ZVS ZCS 200 50 270 26 14 100 138 182 226 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 16 150 tf VDS=670V D=50% RG=0.75Ω T J=125°C T C=75°C Hard switching 0 35 55 75 95 115 ID, Drain Current (A) 135 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100UM65S-AG – Rev 2 July, 2006 15 T J=150°C 100