COMCHIP MOSFET SMD Diodes Specialist 2N7002W-G (N-Channel) RoHS Device Features SOT-323 -High density cell design for low R DS(ON) . 0.087(2.20) 0.070(1.80) -Voltage control small signal switch. D -Rugged and reliable. 0.054(1.35) 0.045(1.15) -High saturation current capability. G Marking: K72 S 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) Equivalent Circuit 0.087(2.20) 0.078(2.00) D G : Gate S : Source D : Drain G 0.004(0.10)max 0.016(0.40) 0.008(0.20) 0.004(0.10)min Dimensions in inches and (millimeter) S O Electrical Ratings (at T A =25 C unless otherwise noted) Symbol Value Unit V DS 60 V Drain current ID 115 mA Power dissipation PD 225 mW T J , T STG -55 to +150 Parameter Drain-Source voltage Junction and storage temperature range O C O Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Conditions Symbol V GS =0V, I D =10μA Drain-Source breakdown voltage Min 60 V BR(DSS) Typ Max Unit V V V 2.5 V 60 V GS =0V, I D =3mA Gate-Threshold voltage V DS =V GS , I D =250μA V th(GS) Gate-body leakage V DS =0V, V GS =±25V I GSS ±100 nA Zero gate voltage drain current V DS =60V, V GS =0V I DSS 1 μA On-state drain current V GS =10V, V DS =7V I D(ON) 1 V GS =10V, I D =500mA 7.5 r DS(ON) Drain-Source on resistance Ω V GS =5V, I D =50mA Forward trans conductance V DS =10V, I D =200mA 7.5 g fs V GS =10V, I D =500mA Drain-source on-voltage I S =115mA, V GS =0V Input capacitance Output capacitance V DS =25V, V GS =0V, f=1MHz Reverse transfer capacitance Turn-on time Turn-off time mS 80 3.75 V DS(ON) V GS =5V, I D =50mA Diode forward voltage mA 500 V DD =25V, R L =50Ω, I D =500mA, V GEN =10V, R G =25Ω V 0.375 V SD 1.2 C iss 50 C oss 25 C rss 5 t d(on) 20 t d(off) 40 V pF nS REV:A QW-BTR25 Page 1 COMCHIP MOSFET SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (2N7002W-G) Fig.2 On-Resistance vs Drain Current Fig.1 On-Region Characteristics 7 V GS =10V 9.0V 8.0V 7.0V 6.5V 6.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 0.6 R DS(ON) , Normalized Drain-Source On-Resistance I D , Drain-Source Current (A) 1.0 5.5V 5.0V 0.4 0.2 0 TJ = 25OC 6 VGS = 5.0V 5 4 3 VGS = 10V 2 1 0 0 1 2 5 4 3 0 0.2 V DS , Drain-Source Voltage(V) Fig.3 On-Resistance vs Junction Temperature 0.8 1.0 6 R DS(ON) , Normalized Drain-Source On-Resistance R DS(ON) , Normalized Drain-Source On-Resistance 0.6 Fig.4 On-Resistance vs Gate-Source Voltage 2.0 1.5 V GS =10V, I D =0.5A V GS =5V, I D =0.05A 1.0 0.5 0 -55 0.4 I D , Drain Current (A) 5 4 ID = 500mA 3 ID = 50mA 2 1 0 -30 -5 20 45 70 95 120 O T J , Junction Temperature ( C) 145 0 2 4 6 8 10 12 14 16 18 V GS , Gate to Source Voltage (V) REV:A QW-BTR25 Page 2