COMCHIP SMD Switching Diode SMD Diodes Specialist CDSH516-G RoHS Device Features SOD-523 -Small surface mount type. 0.051(1.30) 0.043(1.10) 0.014(0.35) 0.010(0.25) -High switching speed. 0.033(0.85) 0.030(0.75) Marking: 61 0.067(1.70) 0.059(1.50) 0.031(0.77) 0.020(0.51) 0.003(0.07) 0.001(0.01) 0.006(0.15) 0.003(0.08) Dimensions in inches and (millimeter) O Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Value Unit DC reverse voltage VR 75 V Mean rectifying current IO 250 mA I FSM 0.5 Parameter Peak forward surge current A Junction temperature TJ 150 O Storage temperature T STG -65 to +150 O C C O Electrical Characteristics (at Ta=25 C unless otherwise noted) Parameter Forward voltage Symbol VF Conditions Min Typ. Max I F =1mA 0.715 I F =10mA 0.855 I F =50mA 1.0 I F =150mA 1.25 V R =25V 0.03 V R =75V 1.0 Unit V Reverse current IR μA Capacitance between terminals CT V R =0V, f=1MHz 1.0 pF Reverse recovery time t rr I F =10mA, R L =100Ω 4.0 nS REV:A QW-B0031 Page 1 COMCHIP SMD Switching Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDSH516-G) Fig.2 Forward Characteristics Fig.1 Maximum Continuous Forward Current vs. Solder Point Temperature 10 0 0 lue lu e x. va al va ical v , Ty p , Ma Ty p i c 5 0 OC 5 OC 5 OC , 10 0 0 0 50 100 150 200 0 1.0 T S , Solder Point Temperature ( OC) 2.0 V F , Forward Voltage (V) Fig.3 Maximum Non-repetitive Peak Forward Surge Current Fig.4 Reverse Current vs. Junction Temperature 100 100000 I R , Reverse Current (nA) I FSM , Maximum Forward Surge Current (A) T J= 2 200 200 T J= 2 300 T J= 1 400 a leu 300 I F , Forward Current (mA) I F , Forward Current (mA) 600 10 1 0.1 10000 VR =7 ,M 5V 1000 VR = im ax T V, 75 y c pi V 100 um R al va va 5 =2 lu lue e T V, y c pi al va lu e 10 1 10 100 1000 10000 0 100 200 T J , Junction Temperature ( OC) T P , Pulse Duration (nS) Fig.5 Diode Capacitance Characteristics C D , Diode Capacitance (pF) 0.6 0.4 0.2 0 0 4 8 12 16 V R , Reverse Voltage (V) REV:A QW-B0031 Page 2