COMCHIP CDSNC4148

SMD Switching Diode
SMD Diodes Specialist
CDSNC4148
High Speed
1206
Features
Designed for mounting on small surface.
0.134(3.40)
0.118(3.00)
Silicon Epitaxial Planar Diode.
Fast switching diode.
0.067(1.70)
0.051(1.30)
Mechanical data
Case: 1206
Marking: Cathode Band.
0.037(0.95)
0.029(0.75)
Weight: 0.01 gram(approx.).
0.030(0.75)
0.014(0.35)
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Peak reverse voltage
Symbol Min Typ Max Unit
V RM
100
V
Reverse voltage
VR
75
V
Forward continuous current
I FM
150
mA
Average rectified current sin
half wave rectification with
resistive load
Surge forward current
I F(AV)
f >= 50 HZ
O
T < 1 s and Tj = 25 C
150
I FSM
Power Dissipation
500
PD
Thermal Resistance Junction
To ambient air
R
Storage temperature
T STG
Junction temperature
Tj
1)
400
JA
450
-65
1)
1)
mA
mA
mW
K/W
+175
O
+150
O
C
C
1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 10 mA DC
VF
1.0
V
Reverse current
V R = 20 V
V R = 75 V
V R = 20 V, T J = 150 C
IR
25
5
50
nA
uA
uA
Capacitance
V F = V R = 0V
CT
4
PF
Reverse recovery time
I F =10mA to I R = 1mA,V R =6V, R L =100 ohms
T RR
4
nS
Voltage rise when switching on
Tested with 50 mA pulses, tp = 0.1s,
rise time < 30ns, fp = (5 to 100)kHz
V FR
2.5
V
Rectification efficiency
f = 100MHz, V RF = 2V
O
0.45
REV:B
QW-B0019
Page 1
SMD Switching Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDSNC4148)
Fig. 1 - Forward characteristics
Fig. 2 - Dynamic Forward Resistance
vs. Forward Current
Forward resistance (ohm )
10000
5000
100
10
O
TJ =
25
=1
0.1
C
00
O
C
1
TJ
Forward current (mA )
1000
O
T J = 25 C
f = 1 kHz
2000
1000
500
200
100
50
20
10
5
2
1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
1.8 2.0
0.01
0.1
Forward voltage (V)
Capacitance between terminals(pF)
Power dissipation(mW)
Fig.4 - Relative Capacitance vs.
Reverse Voltage
500
400
300
200
100
0
25
75
50
100
125
150
175
O
T J = 25 C
f = 1 Mhz
1.1
1.0
0.9
0.8
0.7
200
0
Fig.5 - Leakage Current vs.
Junction Temperature
6
4
2
O
8
10
Reverse voltage (V)
Ambient temperature ( C)
Fig.6 - Admissible Repetitive Peak Forward Current vs.Pulse Duration
10000
5000
100
I
50
40
30
20
2000
Reverse current(nA)
100
Forward current (mA)
Fig.3 - Admissible Power Dissipation
vs. Ambient Temperature
0
10
1
1000
I FRM
500
200
50
20
1
10
0.5
0.4
0.3
0.2
5
V R =20V
2
1
T= 1/tp
I FRM
tp
10
5
4
3
2
100
V = tp/T
t
T
0.1
0
20
40
60
80 100 120 140 160 180 200
O
Junction temperature ( C)
10
-5
2
5
10 -4
2
5
10
-3
2
5
10 -2
2
5
10
-1
2
5
1
2
tp
REV:B
QW-B0019
Page 2
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