SMD Switching Diode SMD Diodes Specialist CDSV3-19-G/20-G/21-G - High Speed RoHS Device + Features SOT-323 -Fast switching diode. -Surface mount package ideally for automatic insertion. 0.087 (2.20) 0.070 (1.8) 3 -For general purpose switching applications. 0.054 (1.35) 0.045 (1.15) -High conductance. 1 Mechanical data 2 0.006 (0.15) 0.002 (0.05) 0.056 (1.40) 0.047 (1.20) 0.087 (2.20) 0.078 (2.00) 0.044 (1.10) 0.035 (0.90) Case: SOT-323 Terminals: Solder plated, solderable per MILSTD-750, Method 2026. Marking: CDSV3-19-G KA8 CDSV3-20-G KT2 CDSV3-21-G KT3 0.004 (0.10) max 0.016 (0.40) 0.008 (0.20) 0.004 (0.10) min Dimensions in inches and (millimeters) Maximum Rating (at T A =25 C unless otherwise noted) O Symbol Value Unit Power dissipation PD 200 mW Collector current IF 200 mA VR 120 150 200 V T J , T STG -55 ~ +150 Parameter Collector-base voltage CDSV3-19-G CDSV3-20-G CDSV3-21-G Junction and storage temperature O C Electrical Characteristics (at T A =25 C unless otherwise noted) O Symbol Parameter Test Conditions Min Max 100 150 200 Unit Reverse breakdown voltage CDSV3-19-G CDSV3-20-G CDSV3-21-G V (BR)R I R =100uA Reverse leakage current CDSV3-19-G CDSV3-20-G CDSV3-21-G IR V R =100V V R =150V V R =200V 0.1 UA Forward voltage VF I F =100mA I F =200mA 1 1.25 V Diode capacitance CD V R =0V, f=1MH Z 5 pF Reverse recovery time t rr I F =I R =30mA, Irr=0.1 X I R 50 nS V REV:A QW-B0025 Page 1 SMD Switching Diode SMD Diodes Specialist Characteristic Curves (CDSV3-19-G/20-G/21-G) Fig. 1 - Forward Characteristics Fig. 2 - Leakage Current vs Junction Temperature 1000 100 T J =25 C I R , Leakage Current (uA) I F , Forward Current (mA) O 100 10 1 0.1 0.01 0 1 V F , Forward Voltage (V) 2 10 1 0.1 0.01 0 100 200 T J , Junction Temperature ( OC) REV:A QW-B0025 Page 2