SMD Efficient Fast Recovery Rectifier CEFB101-G Thru CEFB105-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place SMB / DO-214AA Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) Super fast recovery time for high efficient Built-in strain relief 0.185(4.70) 0.160(4.06) Low forward voltage drop 0.012(0.31) 0.006(0.15) Mechanical Data: 0.096(2.44) 0.083(2.13) Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Approx. Weight: 0.063 gram 0.008(0.20) 0.203(0.10) 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics: Parameter Symbol CEFB101-G CEFB102-G VRRM 50 100 200 400 600 V Max. DC Blocking Voltage VDC 50 100 200 400 600 V Max. RMS Voltage VRMS 35 70 140 280 420 V Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 30 A Max. Average Forward Current Io 1.0 A Max. Instantaneous Forward Voltage at 1.0A VF 0.875 1.1 1.25 V Reverse recovery time Trr 25 35 50 nS Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC IR Max. Repetitive Peak Reverse Voltage Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature R JL CEFB103-G CEFB104-G CEFB105-G 5.0 200 13 Unit uA o C/W Tj 150 o C TSTG -55 to +150 o C Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm 2 copper pad areas. “-G” suffix designates RoHS compliant Version Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFB101-G Thru CEFB105-G) Fig.2 - Forward Characteristics Fig.1- Reverse Characteristics 100 10 Forward Current (A) Reverse Current (uA) CEFB101-G ~ 103-G 10 1.0 CEFB104-G 1.0 0.1 CEFB105-G 0.1 0.01 Pulse width 300uS 4% duty cycle 0.01 0 0.001 15 30 45 60 75 90 105 120 135 0 150 Fig. 3 - Junction Capacitance CEFB104-G ~ 105-G 10 1.0 1.2 1.4 1.6 1.8 2.0 Peak Surge Forward Current (A) Junction Capacitance (pF) CEFB104-G ~ 105-G 1.0 0.6 0.8 Fig.4 - Non Repetitive Forward Surge Curre f=1MHz and applied 4VDC reverse voltage 0.1 0.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) 0.01 0.2 100 Number of Cycles at 60Hz Fig. 6 - Current Derating Curve Fig.5 - Test Circuit Diagram and Reverse Recovery Time Characteristics trr NONINDUCTIVE NONINDUCTIVE D.U.T. Single Phase Half Wave 60Hz OSCILLISCOPE 0 1cm 25 50 75 100 125 150 175 Ambient Temperature NOTES: 1. Rise Times = 7ns max., Input Impedance = 1 megohm.22pF. 2. Rise Time = 10ns max., Source Impedance = 50 ohms. SET TIME BASE FOR 50 / 10ns / cm “-G” suffix designates RoHS compliant Version Page2