SMD Efficient Fast Recovery Rectifier CFRB201-G Thru CFRB207-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 2.0 Amp Features: Ideal for surface mount applications Easy pick and place DO-214AA (SMB) Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) Fast recovery time: 150 ~ 500nS Low leakage current 0.185(4.70) 0.160(4.06) Mechanical Data: Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.093 gram 0.012(0.31) 0.006(0.15) 0.096(2.44) 0.083(2.13) 0.008(0.20) 0.203(0.10) 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics: Symbol CFRB 201-G CFRB 202-G CFRB 203-G CFRB 204-G CFRB 205-G CFRB 206-G CFRB 207-G Unit VRRM 50 100 200 400 600 800 1000 V Max. DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Max. RMS Voltage VRMS 35 70 140 280 420 560 700 V Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 60 A Max. Average Forward Current Io 2.0 A Max. Instantaneous Forward Voltage at 2.0A VF 1.3 V Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC IR Parameter Max. Repetitive Peak Reverse Voltage Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature R 250 100 5.0 50 20 JL 500 nS uA o C/W Tj -55 to +150 o C TSTG -55 to +150 o C Note1: Thermal resistance from junction to ambient. “-G” suffix designates RoHS compliant Version www.comchiptech.com Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CFRB201-G Thru CFRB207-G) Fig.1 - Reverse Characteristics Fig.2 - Forward Characteristics 100 100 Forward current ( A ) Reverse Current ( uA ) 1000 Tj=125 C 10 10 1 0.1 1.0 Tj=25 C Pulse width 300uS 4% duty cycle Tj=25 C 0.1 0 0.01 30 60 90 120 150 0 0.4 Percent of Rated Peak Reverse Voltage (%) 1.6 2.0 Fig. 5 - Non Repetitive Forward Surge Current Peak Surge Forward Current ( A ) 140 Junction Capacitance (pF) 1.2 Forward Voltage (V) Fig. 3 - Junction Capacitance 120 Tj=25 C f=1.0MHz Vsig=50mV p-p 100 0.8 80 60 40 60 8.3mS Single Half Sine Wave JEDEC methode 50 40 30 Tj=25 C 20 10 20 0 0 0.1 1.0 10 100 1 1000 5 Reverse Voltage (V) 10 50 1 00 Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 2.1 trr 10 NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1 NONINDUCTIVE Average Forward Current ( A ) 50 NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 2.4 2.0 1.6 1.2 0.8 Single Phase Half Wave 60Hz 0.4 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm “-G” suffix designates RoHS compliant Version www.comchiptech.com Page2