COMCHIP MMBT3906-G

General Purpose Transistor
SMD Diodes Specialist
MMBT3906-G (PNP)
RoHS Device
Features
-Epitaxial planar die construction
SOT-23
-As complementary type, the NPN
0.119 (3.00)
0.110 (2.80)
transistor MMBT3904-G is recommended
3
0.056 (1.40)
0.047 (1.20)
1
2
0.083 (2.10)
0.006 (0.15)
0.002 (0.05)
0.066 (1.70)
Collector
3
0.103 (2.60)
0.086 (2.20)
0.044 (1.10)
0.035 (0.90)
1
Base
0.006 (0.15) max
0.020 (0.50)
0.013 (0.35)
2
Emitter
0.007 (0.20) min
Dimensions in inches and (millimeter)
O
Maximum Ratings(at T A =25 C unless otherwise noted)
Collector-Emitter voltage
Emitter-Base voltage
Max
Unit
V CBO
-40
V
V CEO
-40
V
Symbol
Parameter
Collector-Base voltage
Typ
Min
V EBO
-5
V
Collector current-Continuous
IC
-0.2
A
Col lec tor di ssipa tioi n
PC
0. 3
T STG , T J
St or ag e tempe rat ur e an d jun ction tempe rat ur e
W
+1 50
-55
O
C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Max
Unit
Collector-Base breakdown voltage
I C =-100μA , I E =0
V (BR)CBO
-40
V
Collector-Emitter breakdown voltage
I C =-1mA , I B =0
V (BR)CEO
-40
V
Emitter-Base breakdown voltage
I E =-100μA , I C =0
V (BR)EBO
-5
Collector cut-off current
V CB =-40V , I E =0
Collector cut-off current
V CE =-40V , I B =0
Emitter cut-off current
V EB =-5V , I C =0
DC current gain
V CE =-1V , I C =-10mA
V
I CBO
-0.1
µA
I CEO
-0.1
µA
I EBO
-0.1
µA
h FE(1)
100
60
300
V CE =-1V , I C =-50mA
h FE(2)
Collector-Emitter saturation voltage
I C =-50mA , I B =-5mA
V CE (sat)
-0.3
V
Base-Emitter saturation voltage
I C =-50mA , I B =-5mA
V BE (sat)
-0.95
V
V CE =-20V , I C =-10mA
Transition frequency
f=100MH Z
fT
250
Mhz
Delay time
V CC =-3.0V , V BE =-0.5V
td
35
nS
Rise time
I C =-10mA , I B1 =-1.0mA
tr
35
nS
Storage time
V CC =-3.0V dc , I C =-10mA
ts
225
nS
Fall time
I B1 =I B2 =-1.0mA
tf
75
nS
REV:A
QW-BTR02
Page 1
General Purpose Transistor
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (MMBT3906-G)
Fig. 2 - Charg data
Fig.1 Capacitance
10
5000
Capacitance (pF)
V CC =40V
I C /I B =10
Cobo
Q, Charge (pC)
5
Cibo
1000
QT
QA
100
1
0.1
10
1
50
40
10
1.0
Reverse bias (V)
Fig. 4 - Fall time
Fig. 3 - Turn-On Time
500
500
V CC =40V
I B1 =I B2
tf, Fa l l time (nS)
I C /I B =10
100
[email protected] CC =3.0V
15V
100
I C /I BoC
=20
125
I C /I B =10
40V
10
10
2.0V
[email protected] B =0V
5
5
1
100
10
1
200
200
Figure 6
Figure 5
12
5
f=1.0kHz
4
NF, Noise Figure (dB)
Source resistance=200Ω
IC=1.0mA
Source resistance=200Ω
I C =0.5mA
3
Source resistance=2.0KΩ
IC=50µA
2
1
100
10
Ic - Collector current (mA)
Ic - Collector current (mA)
NF, Noise figure (dB)
Ti m e (n S )
200
100
Ic- Collector current (mA)
Source resistance=2.0KΩ
I C =100µA
1
I C =0.5mA
8
6
4
I C =50µA
I C =100µA
2
0
0.1
I C =1.0mA
10
10
Frequency (kHz)
100
0
0.1
1
10
100
Rg, Source resistance (KΩ)
REV:A
QW-BTR02
Page 2
General Purpose Transistor
SMD Diodes Specialist
h Parameters (VCE=-10Vdc, f=1.0kHz, TA=25oC)
Fig. 8 - Output Admittance
Fig.7 Current gain
hoe, Output admittance (µmhos)
hfe, DC current g a in
300
200
100
70
50
30
0.1
1.0
5.0
50
10
5
0.1
10
1.0
Ic- Collector current (mA)
Fig. 9- Input impedance
Fig. 10- Voltage feedback ratio
h r e , Vol t age feedb a c k ra ti o ( X 1 0 -4)
10
1.0
0.2
0.1
10
1.0
0.5
0.1
10
1.0
Ic - Collector current (mA)
Fig.12-Temperature coefficients
1.0
V BE(sat) @ I C /I B =10
V, Voltage (Volts)
0.8
V BE @ V CE =1.0V
0.6
0.4
V CE(sat) @ I C /I B =10
0.2
0
10
IC, Collector current (mA)
100
200
Θ V , Temperature Coefficients (mV/ oC)
Fig. 11- “ON” voltages
T j =25 oC
10
1.0
Ic - Collector current (mA)
1. 0
10
I C , Collector current (mA)
20
h i e , I npu t imp e d a nce (k Ω )
100
1.0
0.5
VC
+ 25 oC to +125 oC
For V CE(sat)
0
o
o
-55 C to +25 C
-0.5
+ 25 oC to +125 oC
-1.0
o
o
-55 C to +25 C
VB
-1.5
For V BE(sat)
-2.0
0
20
40
60
80
100
120
140 160
180 200
I C , Collector current (mA)
REV:A
QW-BTR02
Page 3