General Purpose Transistor SMD Diodes Specialist MMBT3906-G (PNP) RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the NPN 0.119 (3.00) 0.110 (2.80) transistor MMBT3904-G is recommended 3 0.056 (1.40) 0.047 (1.20) 1 2 0.083 (2.10) 0.006 (0.15) 0.002 (0.05) 0.066 (1.70) Collector 3 0.103 (2.60) 0.086 (2.20) 0.044 (1.10) 0.035 (0.90) 1 Base 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 2 Emitter 0.007 (0.20) min Dimensions in inches and (millimeter) O Maximum Ratings(at T A =25 C unless otherwise noted) Collector-Emitter voltage Emitter-Base voltage Max Unit V CBO -40 V V CEO -40 V Symbol Parameter Collector-Base voltage Typ Min V EBO -5 V Collector current-Continuous IC -0.2 A Col lec tor di ssipa tioi n PC 0. 3 T STG , T J St or ag e tempe rat ur e an d jun ction tempe rat ur e W +1 50 -55 O C O Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-Base breakdown voltage I C =-100μA , I E =0 V (BR)CBO -40 V Collector-Emitter breakdown voltage I C =-1mA , I B =0 V (BR)CEO -40 V Emitter-Base breakdown voltage I E =-100μA , I C =0 V (BR)EBO -5 Collector cut-off current V CB =-40V , I E =0 Collector cut-off current V CE =-40V , I B =0 Emitter cut-off current V EB =-5V , I C =0 DC current gain V CE =-1V , I C =-10mA V I CBO -0.1 µA I CEO -0.1 µA I EBO -0.1 µA h FE(1) 100 60 300 V CE =-1V , I C =-50mA h FE(2) Collector-Emitter saturation voltage I C =-50mA , I B =-5mA V CE (sat) -0.3 V Base-Emitter saturation voltage I C =-50mA , I B =-5mA V BE (sat) -0.95 V V CE =-20V , I C =-10mA Transition frequency f=100MH Z fT 250 Mhz Delay time V CC =-3.0V , V BE =-0.5V td 35 nS Rise time I C =-10mA , I B1 =-1.0mA tr 35 nS Storage time V CC =-3.0V dc , I C =-10mA ts 225 nS Fall time I B1 =I B2 =-1.0mA tf 75 nS REV:A QW-BTR02 Page 1 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMBT3906-G) Fig. 2 - Charg data Fig.1 Capacitance 10 5000 Capacitance (pF) V CC =40V I C /I B =10 Cobo Q, Charge (pC) 5 Cibo 1000 QT QA 100 1 0.1 10 1 50 40 10 1.0 Reverse bias (V) Fig. 4 - Fall time Fig. 3 - Turn-On Time 500 500 V CC =40V I B1 =I B2 tf, Fa l l time (nS) I C /I B =10 100 tr@V CC =3.0V 15V 100 I C /I BoC =20 125 I C /I B =10 40V 10 10 2.0V td@Vo B =0V 5 5 1 100 10 1 200 200 Figure 6 Figure 5 12 5 f=1.0kHz 4 NF, Noise Figure (dB) Source resistance=200Ω IC=1.0mA Source resistance=200Ω I C =0.5mA 3 Source resistance=2.0KΩ IC=50µA 2 1 100 10 Ic - Collector current (mA) Ic - Collector current (mA) NF, Noise figure (dB) Ti m e (n S ) 200 100 Ic- Collector current (mA) Source resistance=2.0KΩ I C =100µA 1 I C =0.5mA 8 6 4 I C =50µA I C =100µA 2 0 0.1 I C =1.0mA 10 10 Frequency (kHz) 100 0 0.1 1 10 100 Rg, Source resistance (KΩ) REV:A QW-BTR02 Page 2 General Purpose Transistor SMD Diodes Specialist h Parameters (VCE=-10Vdc, f=1.0kHz, TA=25oC) Fig. 8 - Output Admittance Fig.7 Current gain hoe, Output admittance (µmhos) hfe, DC current g a in 300 200 100 70 50 30 0.1 1.0 5.0 50 10 5 0.1 10 1.0 Ic- Collector current (mA) Fig. 9- Input impedance Fig. 10- Voltage feedback ratio h r e , Vol t age feedb a c k ra ti o ( X 1 0 -4) 10 1.0 0.2 0.1 10 1.0 0.5 0.1 10 1.0 Ic - Collector current (mA) Fig.12-Temperature coefficients 1.0 V BE(sat) @ I C /I B =10 V, Voltage (Volts) 0.8 V BE @ V CE =1.0V 0.6 0.4 V CE(sat) @ I C /I B =10 0.2 0 10 IC, Collector current (mA) 100 200 Θ V , Temperature Coefficients (mV/ oC) Fig. 11- “ON” voltages T j =25 oC 10 1.0 Ic - Collector current (mA) 1. 0 10 I C , Collector current (mA) 20 h i e , I npu t imp e d a nce (k Ω ) 100 1.0 0.5 VC + 25 oC to +125 oC For V CE(sat) 0 o o -55 C to +25 C -0.5 + 25 oC to +125 oC -1.0 o o -55 C to +25 C VB -1.5 For V BE(sat) -2.0 0 20 40 60 80 100 120 140 160 180 200 I C , Collector current (mA) REV:A QW-BTR02 Page 3