TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DUAL ULTRAFAST POWER RECTIFIER Qualified per MIL-PRF-19500/617 DEVICES LEVELS 1N6672 1N6673 1N6674 1N6672R 1N6673R 1N6674R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode) Parameters / Test Conditions Symbol Value Unit VRWM 300 400 500 Vdc IF 15 Adc Peak Surge Forward Current IFSM 150 A(pk) Thermal Resistance - Junction to Case Rθjc 2.0 °C/W 1N6672, R 1N6673, R 1N6674, R Peak Repetitive Reverse Voltage Average Forward Current (1) TC = +100°C TO-254 Note: (1) Derate @ 150mA/°C above TC = 100°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Breakdown Voltage (2) IR = 500µAdc 1N6672, R 1N6673, R 1N6674, R Forward Voltage (2) IF = 10A (pk) IF = 20A (pk) Reverse Leakage Current (2) VR = 240V VR = 320V VR = 400V 1N6672, R 1N6673, R 1N6674, R Reverse Leakage Current (2) VR = 240V, TC = +100°C VR = 320V, TC = +100°C VR = 400V, TC = +100°C 1N6672, R 1N6673, R 1N6674, R Symbol Min. VBR 300 400 500 Max. Unit Vdc •1 •2 •3 1N6672, 1N6673, 1N6674 VF1 VF2 1.35 1.55 Vdc IR1 50 µAdc •1 •2 •3 1N6672R, 1N6673R, 1N6674R IR2 5 mAdc Reverse Recovery Time IF = 0.5A, IR = 1A, IRR = 0.25A trr 35 nS Junction Capacitance VR = 10Vdc, f = 1.0MHz, Vsig = 50mV (p-p) (max) CJ 150 pF Note: (2) Pulse Test; 300µS, duty cycle ≤ 2% T4-LDS-0020 Rev. 1 (072046) Page 1 of 1