SuperBlue™ LEDs C430CB290-S0100 Cree’s SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC® substrate to deliver the ultimate price/performance for high-intensity blue LEDs. The C430CB290-S0100 is designed for use in high ambient-light conditions with a typical output of 1150 µW and a 465 nm dominant wavelength (at 20 mA). Cree’s CB series chips are sorted onto tape and compatible with most radial and SMT LED assembly processes. FEATURES APPLICATIONS • High Performance – 1150 μW • Full-Color Displays & Moving Message Signs • Superior SiC Substrate Technology • Solid-State Incandescent Replacement Bulbs • 465 nm Dominant Wavelength • High Ambient Panel Indicators • Excellent Chip-to-Chip Consistency • Color Printers & Scanners • High Reliability • Medical & Analytical Instruments C430CB290-S0100 Chip Diagram R3L, Rev. M Datasheet: CP Top View Bottom View Die Cross Section Anode (+) G•SiC LED Chip 275 x 275 μm Mesa (junction) 246 x 246 μm Gold Bond Pad 115 μm Diameter SiC Substrate t = 250 μm Backside Metallization Cathode (-) Subject to change without notice. www.cree.com Maximum Ratings at TA = 25°C Notes 1&3 C430CB290-S0100 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 70 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Forward Voltage (Vf, V) Part Number C430CB290-S0100 Radiant Flux (P, μW) Note 3 Reverse Current [I(Vr=5V), μA] Flux (mlm) Peak Wavelength (λd, nm) Dominant Wavelength (λd, nm) Full Width Half Max (λD, nm) Typ. Max. Min. Typ. Max. Typ. Typ. Min. Typ. Max. Typ. 4.0 4.5 850 1150 10 65 428 462 465 466 60 Mechanical Specifications Description C430CB290-S0100 Dimension Tolerance P-N Junction Area (μm) 246 x 246 ± 25 Top Area (μm) 275 x 275 ± 25 Bottom Area (μm) 275 x 275 ± 25 Chip Thickness (μm) 250 ± 25 Au Bond Pad Diameter (μm) 115 ± 20 Au Bond Pad Thickness (μm) 1.2 ± 0.5 Back Contact Metal Area (μm) 20 -5, +10t Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (<5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance A. Specifications are subject to change without notice. Copyright © 1998-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc. CPR3L Rev. M Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com