UltraThin™ LEDs CxxxUT230-S0002 Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES APPLICATIONS • Small Chip – 230 x 230 x 85 μm • Mobile Phone Keypads • UT LED Performance • Audio Product Display Lighting – 5.5 mW min. (455–475 nm) Blue • Mobile Appliance Keypads – 2.5 mW min. (500-510 nm) Traffic Green • Automotive Applications – 2.5 mW min. (520-535 nm) Green • Low Forward Voltage – 2.9–3.0 V Typical at 5 mA • Single Wire Bond Structure • Class 2 ESD Rating CxxxUT230-S0002 Chip Diagram .E CPR3CD Rev Data Sheet: Top View Bottom View G•SiC LED Chip 230 x 230 μm Die Cross Section SiC Substrate Bottom Surface 150 x 150 μm Mesa (junction) 176 x 176 μm Gold Bond Pad 105 μm Diameter InGaN Anode (+) SiC Substrate h = 85 μm Backside Metallization 80 x 80 μm Subject to change without notice. www.cree.com Cathode (-) Maximum Ratings at TA = 25°C Notes 1&3 CxxxUT230-S0002 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range Electrostatic Discharge Threshold (HBM) -40°C to +100°C 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C460UT230-S0002 2.7 2.9 3.1 1 21 C470UT230-S0002 2.7 2.9 3.1 1 22 C505UT230-S0002 2.7 2.9 3.2 1 30 C527UT230-S0002 2.7 3.0 3.2 1 35 Mechanical Specifications Description CxxxUT230-S0002 Dimension Tolerance P-N Junction Area (μm) 176 x 176 ± 25 Top Area (μm) 230 x 230 ± 25 Bottom Area (Substrate) (μm) 150 x 150 ± 25 Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) 85 ± 10 105 -5, +15 1.2 ± 0.5 80 x 80 ± 25 Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific application. Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3CD Rev. E Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxUT230-S0002 LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT230-S0002) orders may be filled with any or all bins (CxxxUT230-0xxx) contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If = 5 mA. Radiant Flux C460UT230-S0002 8.0 mW C460UT230-0101 5.5 mW 455 nm C460UT230-0102 460 nm Dominant Wavelength 465 nm Radiant Flux C470UT230-S0002 8.0 mW C470UT230-0101 5.5 mW 465 nm C470UT230-0102 470 nm Dominant Wavelength 475 nm Radiant Flux C505UT230-S0002 5.5 mW C505UT230-0103 C505UT230-0104 C505UT230-0101 C505UT230-0102 2.5 mW 500 nm 505 nm Dominant Wavelength 510 nm Radiant Flux C527UT230-S0002 5.0 mW C527UT230-0104 C527UT230-0105 C527UT230-0106 C527UT230-0101 C527UT230-0102 C527UT230-0103 2.5 mW 520 nm 525 nm 530 nm Dominant Wavelength 535 nm Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3CD Rev. E Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the UT230 product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current Forward Current vs Forward Voltage 12.0 30 527nm 8.0 505nm 25 470nm 4.0 Shift (nm) If (mA) 20 15 0.0 10 -4.0 5 -8.0 0 -12.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 Vf (V) 20 25 30 If (mA) Relative Intensity vs Forward Voltage Relative Intensity vs. Peak Wavelength 100 140 460 nm 120 505 nm 80 527 nm Relative Intensity (%) % Relative Intensity 100 80 60 40 60 40 20 20 0 0 0 5 10 15 If (mA) 20 25 30 350 400 450 500 Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3CD Rev. E 550 600 650 Wavelength (nm) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com