PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440193 PN: CGH2706 0F Typical Performance Over 2.3-2.6GHz Parameter Small Signal Gain EVM @ 39 dBm Drain Efficiency @ 39 dBm Input Return Loss (TC = 25˚C) of Demonstration Amplifier 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz Units 13.5 13.3 13.0 12.9 dB 2.1 1.9 1.9 2.2 % 24.2 23.8 22.5 22.3 % 9.8 16.0 7.7 5.9 dB Note: Measured in the CGH27060F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. 2007 Rev 1.0 – May Features • 2.3 - 2.9 GHz Operation • >13 dB Small Signal Gain • 2.0 % EVM at 8 W POUT • 23 % Efficiency at 8 W POUT • 2.7˚C/W Typical thermal resistance under 8.0 W PAVE OFDM • WiMAX Fixed Access 802.16-2004 OFDM • WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. www.cree.com/wireless Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -55, +150 ˚C Operating Junction Temperature TJ 175 ˚C Soldering Temperature TS 245 ˚C RθJC 2.7 ˚C/W Thermal Resistance, Junction to Case 1 Note: 1 Measured for the CGH27060F at 8 W PDISS Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.6 -2.5 – VDC VDS = 10 V, ID = 14.4 mA Gate Quiescent Voltage VGS(Q) – -2.6 – VDC VDS = 28 V, ID = 240 mA Saturated Drain Current IDS 9.6 10.4 - A Drain-Source Breakdown Voltage VBR 84 100 – VDC Case Operating Temperature TC -10 - +105 ˚C Screw Torque T - - 80 in-oz DC Characteristics 4 VDS = 6.0 V, VGS = 2 V VGS = -8 V, ID = 14.4 mA Under 8 W PAVE Reference 440193 Package Revision 1 RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted) Small Signal Gain GSS – 13.0 – dB VDD = 28 V, IDQ = 240 mA η – 22.5 – % VDD = 28 V, IDQ = 240 mA, PAVE = 8 W Back-Off Error Vector Magnitude EVM1 – 2.5 – % VDD = 28 V, IDQ = 240 mA, PAVE = 24 dBm Error Vector Magnitude EVM2 – 2.0 – Output Mismatch Stress VSWR – TBD – Y No damage at all phase angles, VDD = 28 V, IDQ = 240 mA Input Capacitance CGS – 19.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 4.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 1.7 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency1 VDD = 28 V, IDQ = 240 mA, PAVE = 8 W Dynamic Characteristics Notes: 1 Drain Efficiency = POUT / PDC 2 Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. 3 4 Measured in the CGH27060F-TB test fixture. Measured on wafer prior to packaging. Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27060F Rev 1.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typical WiMAX Performance Typical EVM at 24 dBm and 39 dBm vs Frequency of CGH27060F in Broadband Amplifier Circuit CGH27060F-TB 4.0 EVM(+24dBm) Error Vector Magnitude (%) 3.5 EVM(+39dBm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Gain and Return Loss vs Frequency of CGH27060F in Broadband Amplifier Circuit CGH27060F-TB, VDD = 28 V, IDQ = 240 mA Typical Gain & Return Loss (Fixture 5) 15 6 13 3 9 Gain (dB) 0 2.50 GHz 12.9 dB -3 7 -6 5 -9 DB(|S(2,1)|) (L) Fix5_dev1246_4_Idsq228_S21 3 -12 DB(|S(1,1)|) (R) Fix5_dev1246_4_Idsq228_S21 1 DB(|S(1,1)|) (R) Fix5_dev1246_4_Idsq228_S12 -1 -3 DB(|S(2,1)|) (R) Fix5_dev1246_4_Idsq228_S12 -15 -18 2.50 GHz -22.7 dB -21 -5 -24 2 2.2 2.4 2.6 Frequency (GHz) 2.8 Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. S12, S11, S22 (dB) 11 CGH27060F Rev 1.0 Preliminary 3 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typical WiMAX Performance 4.0 40% 3.5 35% EVM(2.5) 3.0 30% Effic(2.5) 2.5 25% 2.0 20% 1.5 15% 1.0 10% 0.5 5% 0.0 Drain Efficiency Error Vector Magnitude (%) EVM vs POUT at 2.5 GHz of CGH27060F in Broadband Amplifier Circuit CGH27060F-TB 0% 20 22 24 26 28 30 32 34 36 38 40 42 WiMAX Average POUT Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27060F Rev 1.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH27060F-TB Demonstration Amplifier Circuit Schematic J1 C30 9 8 DRAIN (+28 V) GATE GND 7 6 5 4 3 2 1 C31 C16 C8 C7 C6 C5 C11 C4 C12 C13 C14 C15 C2 J2 RF Input L1 R1 FLANGED PACKAGE J3 RF Output C1 Q1 R2 C10 C21 C17 C18 C19 C20 C22 CGH27060F-TB Demonstration Amplifier Circuit Outline CGH27060F - TB 2.3- 2.5 GHZ 3-000543 Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27060F Rev 1.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH27060F-TB Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 22 OHMS 1 R2 RES, 1/16W, 0603, 1%, 100 OHMS 1 CAP, 470PF, 10%,100V, 0603 3 C16,C22 CAP, 33 UF, 20%, G CASE 1 C15,C21 C6,C13,C19 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C8 CAP 10UF 16V TANTALUM 1 C10 CAP, 8.2pF, +/-5%, 100B 1 C1 CAP, 0.9pF, +/-0.05pF, 0603 1 C2 CAP, 2.2pF, +/-0.1pF, 0603 1 CAP, 10.0pF,+/-5%, 0603 3 CAP, 82pF, +/-5%, 0603 5 CAP,33000PF, 0805,100V, X7R 3 It is a trace on the PCB and does not require a component. 1 C4,C11,C17 C5,C12,C18,C30,C31 C7,C14,C20 L1 J2,J3 CONN SMA STR PANEL JACK RECP 1 J1 HEADER RT>PLZ .1CEN LK 9POS 1 Q1 CGH27060F 1 CGH27060F-TB Demonstration Amplifier Circuit Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27060F Rev 1.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2300 3.3 - j7.0 11.2 - j7.8 2400 4.0 - j7.0 9.9 - j8.0 2500 4.1 - j7.5 8.4 - j8.1 2600 3.6 - j7.7 7.3 - j7.8 2700 2.9 - j7.3 6.1 - j7.3 Note : VDD = 28V, IDQ = 240mA. In the 440193 package. Note2: Impedances are extracted from the CGH27060F-TB demonstration circuit and are not source and load pull data derived from the transistor. 1 Product Dimensions CGH27060F (Package Type — 440193) PRELIMINARY Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27060F Rev 1.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639 Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH27060F Rev 1.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless