CYSTEKEC BTA1576S3

CYStech Electronics Corp.
Spec. No. : C306S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTA1576S3
Description
• The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose
amplification.
• Excellent hFE linearity
• Complementary to BTC4081S3.
Symbol
Outline
BTA1576S3
SOT-323
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTA1576S3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
-60
-50
-6
-150
225
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C306S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-60
-50
-6
120
60
-
Typ.
-0.2
140
4.0
Max.
-0.1
-0.1
-0.5
820
5.0
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=30MHz
VCB=-12V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTA1576S3
Q
120-270
R
180-390
S
270-560
T
410-820
CYStek Product Specification
Spec. No. : C306S3
Issued Date : 2002.05.11
CYStech Electronics Corp.
Revised Date : 2002.11.26
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=6V
100
10
VCE(SAT)@IC=10IB
100
10
0.1
1
10
100
1000
0.1
Collector Current---IC(mA)
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
Cutoff Frequency---FT(GHZ)
1
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
100
[email protected]=12V
0.1
0.1
1
10
100
1000
Collector Current---IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTA1576S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C306S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 4/4
SOT-323 Dimension
Marking:
3
A
Q
A1
1
C
TE
A4
Lp
2
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
2 mm
1
Style: Pin 1.Base 2.Emitter 3.Collector
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
0.0079
-
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1576S3
CYStek Product Specification