Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC4102S3 Description The BTC4102S3 is designed for high voltage amplification application. Features • High breakdown voltage. (BVCEO=120V) • Complementary to BTA1579S3 Symbol Outline BTC4102S3 SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTC4102S3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 120 120 5 50 200 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 120 120 5 56 - Typ. 140 2.5 Max. 0.5 0.5 0.5 390 - Unit V V V µA µA V MHz pF Test Conditions IC=50µA IC=1mA IC=50µA VCB=100V VEB=4V IC=10mA, IB=1mA VCE=6V, IC=2mA VCE=12V, IC=2mA, f=100MHz VCB=12V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTC4102S3 K 56~120 P 82~180 Q 120~270 R 180~390 CYStek Product Specification Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) 1000 Current Gain---HFE HFE@VCE=6V VCE(SAT)@IC=10IB 100 10 100 0.1 1 10 0.1 100 1 10 100 Collector Current ---IC(mA) Collector Current--- IC(mA) Cutoff Frequency vs Collector Current Saturation Voltage vs Collector Current 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB FT@VCE=12V 0.1 100 0.1 1 10 100 1000 Collector Current ---IC(mA) 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) BTC4102S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 4/4 SOT-323 Dimension 3 Marking: A Q A1 1 C Lp 2 TE G1 detail Z bp e1 W B e E D A Z 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 θ He 0 v A Style: Pin 1.Base 2.Emitter 3.Collector 2 mm 1 scale *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 θ Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4102S3 CYStek Product Specification