CYSTEKEC BTC4102S3

Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 1/4
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC4102S3
Description
The BTC4102S3 is designed for high voltage amplification application.
Features
• High breakdown voltage. (BVCEO=120V)
• Complementary to BTA1579S3
Symbol
Outline
BTC4102S3
SOT-323
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTC4102S3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
120
120
5
50
200
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
120
120
5
56
-
Typ.
140
2.5
Max.
0.5
0.5
0.5
390
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=50µA
IC=1mA
IC=50µA
VCB=100V
VEB=4V
IC=10mA, IB=1mA
VCE=6V, IC=2mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTC4102S3
K
56~120
P
82~180
Q
120~270
R
180~390
CYStek Product Specification
Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
1000
Current Gain---HFE
[email protected]=6V
VCE(SAT)@IC=10IB
100
10
100
0.1
1
10
0.1
100
1
10
100
Collector Current ---IC(mA)
Collector Current--- IC(mA)
Cutoff Frequency vs Collector Current
Saturation Voltage vs Collector Current
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
[email protected]=12V
0.1
100
0.1
1
10
100
1000
Collector Current ---IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTC4102S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 4/4
SOT-323 Dimension
3
Marking:
A
Q
A1
1
C
Lp
2
TE
G1
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
Style: Pin 1.Base 2.Emitter 3.Collector
2 mm
1
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
Inches
DIM
Min.
Max.
e1
0.0256
He
0.0787 0.0886
Lp
0.0059 0.0177
Q
0.0051 0.0091
v
0.0079
w
0.0079
θ
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4102S3
CYStek Product Specification