CYSTEKEC BTC4505M3

CYStech Electronics Corp.
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 1/5
High Voltage NPN Epitaxial Planar Transistor
BTC4505M3
Features
• High breakdown voltage. (BVCEO =400V)
• Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
• Complementary to BTA1759M3
• Pb-free package
Symbol
Outline
BTC4505M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTC4505M3
Symbol
Limit
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
400
400
6
300
600
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
Min.
400
400
6
82
-
Typ.
0.1
20
7
Max.
10
10
0.5
1.5
270
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=400V, IE=0
VEB=6V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=10mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTC4505M3
BTC4505M3
Package
SOT-89
(Pb-free )
Shipping
1000 pcs / Tape & Reel
CYStek Product Specification
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage-(mV)
Current Gain---HFE
[email protected]=10V
100
[email protected]=10IB
1000
100
10
10
0.1
1
10
100
0.1
1000
1
10
100
1000
Collector Current ---IC(mA)
Collector Current ---IC(mA)
Power Derating Curve
Saturation Voltage vs Collector Current
700
10000
Power Dissipation---PD(mW)
Saturation Voltage-(mV)
600
[email protected]=10IB
1000
500
400
300
200
100
0
100
0.1
1
10
100
Collector Current--- IC(mA)
BTC4505M3
1000
0
50
100
150
200
Ambient Temperature---TA(℃ )
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 4/5
Reel Dimension
Carrier Tape Dimension
BTC4505M3
CYStek Product Specification
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 5/5
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
H
C
3D
D
B
E
I
F
Style: Pin 1. Base 2. Collector 3. Emitter
G
3-Lead SOT-89 Plastic
Surface Mounted Package
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4505M3
CYStek Product Specification