CYStech Electronics Corp. Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1862I3 Features • Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A • Excellent current gain characteristics • Complementary to BTB1240I3 Symbol Outline BTD1862I3 TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits Unit 40 30 5 2 5 (Note) 1 10 150 -55~+150 V V V A A W W °C °C Note : Single Pulse , Pw=10ms BTD1862I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 40 30 5 82 - Typ. 100 50 Max. 1 1 1 560 - Unit V V V µA µA V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 IC=3A, IB=0.1A VCE=3V, IC=0.5A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f =1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTD1862I3 P 82~180 Q 120~270 R 180~390 S 270~560 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 VCE(SAT) 100 Saturation Voltage---(mV) Current Gain---HFE VCE=5V VCE=3V VCE=1V 1000 100 IC=40IB 10 IC=10IB IC=20IB 1 10 1 10 100 1000 Collector Current---IC(mA) 1 10000 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 10000 1.2 Power Dissipation---PD(W) Saturation Voltage---(mV) VBE(SAT )@IC=10IB 1000 1 0.8 0.6 0.4 0.2 0 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 50 100 150 200 Case Temperature---TC(℃) BTD1862I3 CYStek Product Specification Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-251 Dimension A B C Marking: D D1862 F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1862I3 CYStek Product Specification