CYSTEKEC BTD1864I3

CYStech Electronics Corp.
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 1/4
Low Vcesat NPN Epitaxial Planar Transistor
BTD1864I3
Features
• Low VCE(sat)
• Excellent current gain characteristics
• Complementary to BTB1243I3
Symbol
Outline
BTD1864I3
TO-251
B:Base
C:Collector
E:Emitter
B CCE
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
BTD1864I3
Symbol
Limits
Unit
VCBO
VCES
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
80
80
50
6
5
7.5
1
15
150
-55~+150
V
V
V
V
*1
A
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
ton
tstg
tf
Min.
80
80
50
6
100
180
100
-
Typ.
400
15
35
300
20
Max.
1
1
135
240
1.2
820
-
Unit
V
V
V
V
µA
µA
mV
mV
V
MHz
pF
ns
ns
ns
Test Conditions
IC=10µA, IE=0
IC=100µA, RBE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=20mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=10V, IC=500mA, f=100MHz
VCB=10V, f=1MHz
VCC=25V, IC=10IB1=-10IB2=1A,
RL=25Ω
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
BTD1864I3
R
180~390
S
270~560
T
390~820
CYStek Product Specification
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1
100
Saturation Voltage---(V)
Current Gain---HFE
VCE=5V
VCE=2V
VCE=1V
0.1
[email protected]=40IB
0.01
[email protected]=20IB
[email protected]=10IB
10
0.001
1
10
100
1000
10000
1
Collector Current---IC(mA)
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
10
1.2
Power Dissipation---PD(W)
Saturation Voltage---(V)
10
[email protected]=20IB
1
[email protected]=40IB
0.1
1
0.8
0.6
0.4
0.2
0
1
10
100
1000
10000
Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃)
Power Derating Curve
Power Dissipation---PD(W)
16
14
12
10
8
6
4
2
0
0
BTD1864I3
50
100
150
Case Temeprature---TC(℃)
200
CYStek Product Specification
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 4/4
CYStech Electronics Corp.
TO-251 Dimension
A
B
C
Marking:
D
D1864
F
G
3
K
E
I
H
2
1
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
J
*: Typical
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2520
0.2677
0.2677
0.2835
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
*0.1811
0.0354
0.0315
0.2047
0.2165
Millimeters
Min.
Max.
6.50
*4.60
0.90
0.80
5.20
5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1864I3
CYStek Product Specification