CYStech Electronics Corp. Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTB1243I3 Symbol Outline BTD1864I3 TO-251 B：Base C：Collector E：Emitter B CCE B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms BTD1864I3 Symbol Limits Unit VCBO VCES VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg 80 80 50 6 5 7.5 1 15 150 -55~+150 V V V V *1 A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob ton tstg tf Min. 80 80 50 6 100 180 100 - Typ. 400 15 35 300 20 Max. 1 1 135 240 1.2 820 - Unit V V V V µA µA mV mV V MHz pF ns ns ns Test Conditions IC=10µA, IE=0 IC=100µA, RBE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=10V, IC=500mA, f=100MHz VCB=10V, f=1MHz VCC=25V, IC=10IB1=-10IB2=1A, RL=25Ω *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range BTD1864I3 R 180~390 S 270~560 T 390~820 CYStek Product Specification Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1 100 Saturation Voltage---(V) Current Gain---HFE VCE=5V VCE=2V VCE=1V 0.1 VCESAT@IC=40IB 0.01 VCESAT@IC=20IB VCESAT@IC=10IB 10 0.001 1 10 100 1000 10000 1 Collector Current---IC(mA) 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 10 1.2 Power Dissipation---PD(W) Saturation Voltage---(V) 10 VBESAT@IC=20IB 1 VBESAT@IC=40IB 0.1 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) Power Derating Curve Power Dissipation---PD(W) 16 14 12 10 8 6 4 2 0 0 BTD1864I3 50 100 150 Case Temeprature---TC(℃) 200 CYStek Product Specification Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 4/4 CYStech Electronics Corp. TO-251 Dimension A B C Marking: D D1864 F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1864I3 CYStek Product Specification