CYSTEKEC BTD2061FP

CYStech Electronics Corp.
Spec. No. : C608FP
Issued Date : 2005.09.07
Revised Date :
Page No. : 1/4
Low Vcesat NPN Epitaxial Planar Transistor
BTD2061FP
Features
• Low saturation voltage, typically VCE(sat)=0.2V at IC/IB=2A/0.2A.
• Excellent DC current gain characteristics.
• Wide SOA(safe operating area).
• Pb-free package.
Symbol
Outline
BTD2061FP
TO-220FP
B:Base
C:Collector
E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
80
60
5
3
6 (Note 1)
2
30
62.5
4.167
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
BTD2061FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C608FP
Issued Date : 2005.09.07
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
BVEBO
ICEO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
80
60
5
100
-
0.3
8
70
10
10
1
1.5
320
-
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IB=0
VCE=60V, IB=0
VEB=4V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=5V, IC=500mA
VCE=5V, IC=500mA, f=5MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
E
F
Range
100~200
160~320
BTD2061FP
CYStek Product Specification
Spec. No. : C608FP
Issued Date : 2005.09.07
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
Current Gain---HFE
1000
VCE=5V
100
VCE=2V
1000
[email protected]=40IB
[email protected]=20IB
100
[email protected]=10IB
10
10
1
10
100
1000
10000
1
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
Saturation Voltage vs Collector Current
3
Power Dissipation---PD(W)
10000
Saturation Voltage---(mV)
10
[email protected]=10IB
1000
3
2
2
1
1
0
100
1
10
100
1000
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(W)
40
30
20
10
0
0
50
100
150
200
Case Temperature---TC(℃)
BTD2061FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C608FP
Issued Date : 2005.09.07
Revised Date :
Page No. : 4/4
TO-220FP Dimension
Marking:
D2061
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
*: Typical
Inches
Min.
Max.
0.169
0.185
0.051 REF
0.110
0.126
0.098
0.114
0.020
0.030
0.043
0.053
0.069
0.059
0.020
0.030
DIM
A
A1
A2
A3
b
b1
b2
c
Millimeters
Min.
Max.
4.300
4.700
1.300 REF
2.800
3.200
2.500
2.900
0.500
0.750
1.100
1.350
1.750
1.500
0.500
0.750
DIM
D
E
e
F
Φ
L
L1
L2
Inches
Min.
Max.
0.408
0.392
0.583
0.598
0.100 TYP
0.106 REF
0.138 REF
1.102
1.118
0.067
0.075
0.075
0.083
Millimeters
Min.
Max.
10.360
9.960
14.800 15.200
2.540 TYP
2.700 REF
3.500 REF
28.000 28.400
1.700
1.900
1.900
2.100
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2061FP
CYStek Product Specification