CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA • Excellent current gain characteristics • Complementary to BTB1424A3 • Pb-free package Symbol Outline BTD2150A3 TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tstg Limit Unit 80 50 6 3 7 (Note) 750 150 -55~+150 V V V A A mW °C °C Note : *1. Single Pulse Pw≦350µs,Duty≦2%. BTD2150A3 CYStek Product Specification Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 2/5 CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 80 50 6 180 180 150 - Typ. 0.1 0.25 90 45 Max. 100 100 0.25 0.5 1.5 820 - Unit V V V nA nA V V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=200mA VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=100mA, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank R S T Range 180~290 270~560 390~820 Characteristic Curves Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 700 500uA 120 Collector Current---IC(mA) Collector Current---IC(mA) 140 400uA 100 80 300uA 60 200uA 40 100uA 20 IB=0uA 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) BTD2150A3 2.5mA 600 500 2mA 400 1.5mA 300 1mA 200 500uA 100 IB=0uA 0 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) CYStek Product Specification Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 3/5 CYStech Electronics Corp. Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 3500 Collector Current---IC(mA) Collector Current---IC(mA) 2500 10mA 2000 8mA 1500 6mA 1000 4mA 500 2mA 25mA 3000 20mA 2500 15mA 2000 10mA 1500 5mA 1000 500 IB=0mA IB=0mA 0 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Current gain vs Collector current Saturation voltage vs Collector current 1000 1000 VCE(sat) 100 Saturation voltage---(mV) Current gain---HFE VCE=5V VCE=2V VCE=1V 10 100 IC=40IB 10 IC=10IB 1 1 10 100 1000 Collector current---IC(mA) 1 10000 Saturation votlage vs Collector current 10 100 1000 Collector current---IC(mA) 10000 Power Derating Curve 800 10000 Power Dissipation---PD(mW) VBE(sat)@IC=10IB Saturation voltage---(mV) IC=20IB 1000 100 700 600 500 400 300 200 100 0 1 10 100 1000 Collector current---IC(mA) BTD2150A3 10000 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 4/5 TO-92 Taping Outline H2 H2A H2A H2 D2 A L H3 H4 H L1 H1 D1 F1F2 T2 T T1 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - BTD2150A3 P1 P Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch W1 W D P2 Millimeters Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 CYStek Product Specification Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 5/5 CYStech Electronics Corp. TO-92 Dimension α2 A Marking: B 1 2 3 D2150 α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2150A3 CYStek Product Specification