CYStech Electronics Corp. Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2005.06.28 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2444N3 Features • The BTD2444N3 is designed for general purpose low frequency power amplifier applications. • Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA • Complementary to BTB1590N3 • Pb-free package Symbol Outline SOT-23 BTD2444N3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits Unit 40 25 6 800 1.5 (Note) 225 150 -55~+150 V V V mA A mW °C °C Note : Single pulse, Pw=10ms BTD2444N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2005.06.28 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 fT Cob Min. 40 25 6 180 40 - Typ. 40 0.15 0.25 150 15 Max. 0.5 0.5 60 0.3 0.5 1 560 - Unit V V V µA µA mV V V V MHz pF Test Conditions IC=100µA, IE=0 IC=2mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VEB=6V, IC=0 IC=50mA, IB=2.5mA IC=400mA, IB=20mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=1V, IC=600mA VCE=5V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTD2444N3 BTD2444N3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel BS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2005.06.28 Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Current Gain---HFE Saturation Voltage---(mV) HFE@VCE=2V VCE(SAT)@IC=20IB 100 10 100 0.1 1 10 100 1 1000 10 100 1000 Collector Current ---IC(mA) Collector Current--- IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current Cutoff Frequency---FT(GHZ) 1 Saturation Voltage---(mV) 1000 VBE(SAT)@IC=20IB 100 FT@VCE=2V 0.1 1 10 100 Collector Current ---IC(mA) 1000 1 10 Collector Current---IC(mA) 100 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTD2444N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2005.06.28 Page No. : 4/4 SOT-23 Dimension A L Marking: 3 B S TE BS 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H J Style: Pin 1.Base 2.Emitter 3.Collector *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2444N3 CYStek Product Specification