CYSTEKEC BTD2444N3

CYStech Electronics Corp.
Spec. No. : C223N3
Issued Date : 2003.05.26
Revised Date : 2005.06.28
Page No. : 1/4
Low Vcesat NPN Epitaxial Planar Transistor
BTD2444N3
Features
• The BTD2444N3 is designed for general purpose low frequency power amplifier applications.
• Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA
• Complementary to BTB1590N3
• Pb-free package
Symbol
Outline
SOT-23
BTD2444N3
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
Unit
40
25
6
800
1.5 (Note)
225
150
-55~+150
V
V
V
mA
A
mW
°C
°C
Note : Single pulse, Pw=10ms
BTD2444N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223N3
Issued Date : 2003.05.26
Revised Date : 2005.06.28
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
40
25
6
180
40
-
Typ.
40
0.15
0.25
150
15
Max.
0.5
0.5
60
0.3
0.5
1
560
-
Unit
V
V
V
µA
µA
mV
V
V
V
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=2mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=6V, IC=0
IC=50mA, IB=2.5mA
IC=400mA, IB=20mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=1V, IC=600mA
VCE=5V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTD2444N3
BTD2444N3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
BS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223N3
Issued Date : 2003.05.26
Revised Date : 2005.06.28
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage---(mV)
[email protected]=2V
VCE(SAT)@IC=20IB
100
10
100
0.1
1
10
100
1
1000
10
100
1000
Collector Current ---IC(mA)
Collector Current--- IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
Cutoff Frequency---FT(GHZ)
1
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=20IB
100
[email protected]=2V
0.1
1
10
100
Collector Current ---IC(mA)
1000
1
10
Collector Current---IC(mA)
100
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTD2444N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223N3
Issued Date : 2003.05.26
Revised Date : 2005.06.28
Page No. : 4/4
SOT-23 Dimension
A
L
Marking:
3
B
S
TE
BS
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
J
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2444N3
CYStek Product Specification