CYSTEKEC BTD2568L3

Spec. No. : C211L3
Issued Date : 2004.11.18
Revised Date : 2005.03.25
Page No. : 1/4
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTD2568L3
Features
• High BVCEO, 400V minimum
Symbol
Outline
BTD2568L3
SOT-223
C
E
C
B:Base
C:Collector
E:Emitter
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Power Dissipation @TC=25°C
Junction Temperature
Storage Temperature
BTD2568L3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj
Tstg
400
400
6
300
1
200
5
150
-55~+150
V
V
V
mA
A
mA
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C211L3
Issued Date : 2004.11.18
Revised Date : 2005.03.25
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*VBE(on)
hFE1
hFE2
*hFE3
*hFE4
fT
Cob
Min.
400
400
6
50
100
100
40
50
-
Typ.
3.5
Max.
100
100
100
0.2
0.4
0.8
0.9
0.9
250
250
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=400V
VCE=360V
VEB=5V
IC=20mA, IB=2mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=50mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA
VCB=20V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTD2568L3
CYStek Product Specification
Spec. No. : C211L3
Issued Date : 2004.11.18
Revised Date : 2005.03.25
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage-(mV
Current Gain---HFE
VCESAT
VCE=10V
100
VCE=5V
1000
IC=30IB
100
IC=20IB
IC=10IB
10
10
1
10
100
1000
1
Saturation Voltage vs Collector Current
100
1000
Power Derating Curve
10000
6
Power Dissipation---PD(W
Saturation Voltage-(mV
10
Collector Current ---IC(mA)
Collector Current ---IC(mA)
[email protected]=10IB
1000
5
4
3
2
1
100
0
1
10
100
Collector Current--- IC(mA)
BTD2568L3
1000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C211L3
Issued Date : 2004.11.18
Revised Date : 2005.03.25
Page No. : 4/4
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
B
CE
C
1
2
3
D
E
Style: Pin 1.Base 2.Collector 3.Emitter
F
H
G
a1
I
a2
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
o
*13
0o
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
o
*13
0o
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2568L3
CYStek Product Specification