CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3/S Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772T3/S • Pb-free package is available Symbol Outline BTD882T3 TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol Limit Unit VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg 40 30 5 3 7 1 10 150 -55~+150 V V V A A *1 W °C °C Note : *1. Single Pulse Pw≦350µs,Duty≦2%. BTD882T3/S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5 52 100 - Typ. 0.25 90 45 Max. 1 1 0.5 2 500 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Q P E Range 100~200 160~320 250~500 Ordering Information Device BTB882T3 BTB882T3S BTD882T3/S Package TO-126 TO-126 (Pb-free) Shipping 500 pcs / bag 500 pcs / bag CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 3/4 Characteristic Curves C-E saturation voltage vs Collector current Current gain vs Collector current 1000 C-E saturation voltage--VCE(SAT)(mV) 1000 Current gain---HFE VCE=5V VCE=2V 100 VCE=1V 100 IC=40IB 10 IC=10IB IC=20IB 1 10 1 10 100 1000 1 10000 10 100 1000 10000 Collector current---IC(mA) Collector current---IC(mA) Power derating curves B-E saturation votlage vs Collector current 12 Power Dissipation---(W) B-E saturation voltage--VBE(SAT)(mV) 10000 IC=10IB 1000 8 Tc=25℃ 6 4 Ta=25℃ 2 0 100 1 10 100 1000 Collector current---IC(mA) BTD882T3/S 10 10000 0 50 100 150 200 Temperature---(℃) CYStek Product Specification Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 4/4 CYStech Electronics Corp. TO-126 Dimension D E J I Marking: K A M B α3 D882 1 2 3 α4 G C Style: Pin 1.Emitter 2.Collector 3.Base F H L 3-Lead TO-126 Plastic Package CYStek Package Code: T3 α1 α2 *: Typical Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 DIM α1 α2 α3 α4 A B C D E Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882T3/S CYStek Product Specification