CYStech Electronics Corp. Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129T3 Description The BTN2129T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High current capability •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors Equivalent Circuit Outline BTN2129T3 TO-126 C B R1≈8k R2≈120 B：Base C：Collector E：Emitter BTN2129T3 E BCE CYStek Product Specification CYStech Electronics Corp. Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Power Dissipation Junction Temperature Storage Temperature Limits Unit 80 50 5 8 12 *1 1 20 150 -55~+150 V V V A W °C °C Note : *1. Single Pulse Pw=100ms Characteristics (Ta=25°C) Symbol BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) 1 *VBE(on) 2 *hFE 1 *hFE 2 *hFE 3 Min. 50 500 2 2 Typ. - Max. 10 10 2 1.3 1.5 2.1 2 2.1 20 - Unit V µA µA mA V V V V V K K Test Conditions IC=1mA, IB=0 VCE=40V, IE=0 VCB=80V, IE=0 VEB=5V, IC=0 IC=3A, IB=12mA IC=5A, IB=20mA IC=3A, IB=12mA VCE=3V, IC=3A VCE=4V, IC=4A VCE=3V, IC=500mA VCE=3V, IC=3A VCE=4V, IC=4A *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTN2129T3 CYStek Product Specification Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 3/5 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 10000 Saturation Voltage---(mV) Current Gain---H FE VCE = 3V 1000 100 10 1 VCE(SAT)@IC =250IB 1000 100 1 10 100 1000 Collector Current---I C(mA) 10000 10 10000 Saturation Voltage vs Collector Current 10000 10000 VCE(SAT)@IC =500IB Saturation Voltage---(mV) Saturation Voltage---(mV) 1000 Collector Current---I C(mA) Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC =1000IB 1000 100 100 10 100 1000 Collector Current---I C(mA) 10000 100 Saturation Voltage vs Collector Current 1000 Collector Current---I C(mA) 10000 Saturation Voltage vs Collector Current 10000 10000 VBE (SAT)@IC = 250IB Saturation Voltage---(mV) Saturation Voltage---(mV) 100 1000 VBE (SAT)@IC = 500IB 1000 100 100 10 BTN2129T3 100 1000 Collector Current---I C(mA) 10000 10 100 1000 Collector Current---I C(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 4/5 Characteristic Curves(Cont.) On voltage vs Collector Current Power Derating Curve 10000 1.2 Power Dissipation---P D(W) On voltage---(mV) VBE (ON) @VCE = 3V 1000 100 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Collector Current---I C(mA) Power Derating Curve Power Dissipation---P D(W) 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTN2129T3 CYStek Product Specification Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 5/5 CYStech Electronics Corp. TO-126 Dimension D E J I Marking: K A M B α3 N2129 1 2 3 α4 G C Style: Pin 1.Base 2.Collector 3.Emitter F H L 3-Lead TO-126 Plastic Package CYStek Package Code: T3 α1 α2 *: Typical Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 DIM α1 α2 α3 α4 A B C D E Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN2129T3 CYStek Product Specification