CYSTEKEC BTN4401N3

Spec. No. : C203N3-H
Issued Date : 2003.06.06
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTN4401N3
Description
• The BTN4401N3 is designed for using in driver stage of AF amplifier and general purpose switching
application.
• High current , IC = 0.6A
• Low VCE(sat) , VCE(sat) = 0.2V(typ.) at IC/IB = 500mA/50mA
Optimal for low Voltage operation
• Complementary to BTP4403N3.
Symbol
Outline
BTN4401N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTN4401N3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
60
40
6
0.6
225
150
-55~+150
V
V
V
A
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
60
40
6
20
40
80
82
40
-
Typ.
0.2
250
6
Max.
100
0.4
0.75
0.95
1.2
390
-
Unit
V
V
V
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCE=35V, VBE=-0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=5V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE4
Rank
Range
P
82~180
Q
120~270
R
180~390
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=3V
100
10
100
10
0.1
1
10
100
Collector Current ---IC(mA)
BTN4401N3
VCE(SAT)@IC=10IB
1000
1
10
100
1000
Collector Current ---IC(mA)
CYStek Product Specification
Spec. No. : C203N3-H
Issued Date : 2003.06.06
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
Revised Date :
Page No. : 3/4
Cutoff Frequency vs Collector Current
1000
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
[email protected]=5V
VBE(SAT)@IC=10IB
100
0.1
0.1
1
10
100
1000
Collector Current--- IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
BTN4401N3
50
100
150
Ambient Temperature --- Ta( ℃ )
200
CYStek Product Specification
Spec. No. : C203N3-H
Issued Date : 2003.06.06
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
SOT-23 Dimension
A
L
Marking:
3
B
S
TE
2X
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Base 2.Emitter 3.Collector
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN4401N3
CYStek Product Specification