Spec. No. : C222A3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN8050SA3 Description The BTN8050SA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , IC = 700mA • Low VCE(sat) • Complementary to BTP8550SA3. Symbol Outline BTN8050SA3 TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature BTN8050SA3 Symbol Limits Unit VCBO VCEO VEBO IC IB Pd Tj Tstg 25 20 5 700 100 625 150 -55~+150 V V V mA mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C222A3 Issued Date : 2003.10.07 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. 25 20 6 100 150 - Typ. 100 - Max. 1 100 0.5 1 500 10 Unit V V V µA nA V V MHz pF Test Conditions IC=10µA IC=1mA IE=10µA VCB=20V VEB=5V IC=500mA, IB=50mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=1V, IC=500mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 1 Rank Range BTN8050SA3 C 100~180 D 160~300 E 250~500 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C222A3 Issued Date : 2003.10.07 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE VCE = 5V VCE = 2V 100 VCE = 1V 100 VCE(SAT) @ IC=20IB 10 VCE(SAT) @ IC=10IB 1 10 1 10 100 Collector Current---IC(mA) 1 1000 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current On Voltage vs Collector Current 10000 1000 VBE(SAT) @ IC=10IB On Voltage---(mV) Saturation Voltage---(mV) 10 1000 100 VBE(ON) @ VCE=1V 100 1 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) 1000 Power Derating Curve Power Dissipation---PD(mW) 700 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTN8050SA3 CYStek Product Specification Spec. No. : C222A3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date : Page No. : 4/4 TO-92 Dimension α2 A Marking: B 1 2 3 N8050S α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN8050SA3 CYStek Product Specification