CYStech Electronics Corp. Spec. No. : C209A3-H Issued Date : 2003.03.18 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA42A3 Description • High breakdown voltage. (BVCEO=300V) • Low collector output capacitance. (Typ. 3pF at VCB =30V) • Ideal for chroma circuit. Symbol Outline BTNA42A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTNA42A3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 300 300 6 500 625 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C209A3-H Issued Date : 2003.03.18 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 300 300 6 25 52 40 50 - Typ. 0.1 100 3 Max. 100 100 0.5 0.9 270 - Unit V V V nA nA V V MHz pF Test Conditions IC=100uA IC=1mA IE=10uA VCB=200V VEB=6V IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE2 Rank Range BTNA42A3 K 52~120 P 82~180 Q 120~270 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C209A3-H Issued Date : 2003.03.18 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=10V Current Gain---HFE Current Gain---HFE VCE=1V 100 100 10 10 0.1 1 10 Collector Current---IC(mA) 100 0.1 Saturation Voltage vs Collector Current 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 10 10 VCE(sat)@IC=10IB Saturation Voltage---(V) Saturation Voltage---(V) VCE(sat)@IC=20IB 1 0.1 0.01 0.1 1 10 100 1 0.1 0.01 0.1 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1 10 Collector Current---IC(mA) 100 Power Derating Curve 1 700 Power Dissipation--- PD(mW) Saturation Voltage---(V) 600 VBE(sat)@IC=10IB 500 400 300 200 100 0 0.1 0 BTNA42A3 1 10 Collector Current---IC(mA) 100 0 50 100 Ambient Temperature---Ta(℃ ) 150 CYStek Product Specification Spec. No. : C209A3-H Issued Date : 2003.03.18 CYStech Electronics Corp. Revised Date : Page No. : 4/4 TO-92 Dimension α2 A Marking: B 1 2 C NA42 3 α3 C D H I G α1 Style: Pin 1.Emitter 2.Base 3.Collector E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA42A3 CYStek Product Specification