CYSTEKEC BTNA44N3

CYStech Electronics Corp.
Spec. No. : C210N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4
High Voltage NPN Epitaxial Planar Transistor
BTNA44N3
Features
• High breakdown voltage. (BVCEO =400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA.
• Complementary to BTPA94N3
Symbol
Outline
BTNA44N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Limit
Unit
400
400
6
300
225 (Note)
556
150
-55~+150
V
V
V
mA
mW
°C/W
°C
°C
Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
BTNA44N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
hFE 1
hFE 2
*hFE 3
*hFE 4
fT
Cob
Min.
400
400
6
40
52
45
40
20
-
Typ.
0.1
-
Max.
10
10
0.4
0.5
0.75
1.5
270
7
Unit
V
V
V
µA
µA
V
V
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=400V. IE=0
VEB=6V,IC=0
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=100MHz
VCB=20V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
BTNA44N3
K
52~120
P
82~180
Q
120~270
CYStek Product Specification
Spec. No. : C210N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage-(mV)
Current Gain---HFE
[email protected]=10V
100
[email protected]=10IB
1000
100
10
10
0.1
1
10
100
0.1
1000
100
1000
Power Derating Curve
Saturation Voltage vs Collector Current
250
Power Dissipation---PD(mW)
10000
Saturation Voltage-(mV)
10
Collector Current ---IC(mA)
Collector Current ---IC(mA)
[email protected]=10IB
1000
200
150
100
50
0
100
0.1
1
10
100
Collector Current--- IC(mA)
BTNA44N3
1
1000
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
CYStek Product Specification
Spec. No. : C210N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
3
B
TE
3D
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA44N3
CYStek Product Specification