CYSTEKEC BTNH10A3

Spec. No. : C201A3-H
Issued Date : 2003.11.27
Revised Date :
Page No. : 1/4
CYStech Electronics Corp.
VHF/UHF NPN Epitaxial Planar Transistor
BTNH10A3
Description
The BTNH10A3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
Features
• High transition frequency.
• Very low capacitance.
• Small Rbb’-Cc and high current gain.
Symbol
Outline
BTNH10A3
TO-92
B:Base
C:Collector
E:Emitter
BEC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTNH10A3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
30
25
3
50
350
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C201A3-H
Issued Date : 2003.11.27
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE
fT
Cob
Rbb’-Cc
Min.
30
25
3
52
650
-
Typ.
1000
-
Max.
100
100
0.5
0.95
270
0.7
9
Unit
V
V
V
nA
nA
V
V
MHz
pF
ps
Test Conditions
IC=100µA
IC=1mA
IC=10µA
VCB=25V
VEB=2V
IC=4mA, IB=0.4mA
VCE=10V, IC=4mA
VCE=10V, IC=4mA
VCE=10V, IC=4mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
VCB=10V, IC=4mA, f=31.8MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTNH10A3
K
52~120
P
82~180
Q
120~270
CYStek Product Specification
Spec. No. : C201A3-H
Issued Date : 2003.11.27
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
1000
Current Gain---HFE
[email protected]=10V
VCE(SAT)@IC=5IB
100
10
100
0.1
1
10
100
1
1000
10
100
1000
Collector Current--- IC(mA)
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
10
VBE(SAT)@IC=5IB
[email protected]=10V
1
0.1
100
1
10
100
1000
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
400
350
300
250
200
150
100
50
0
0
BTNH10A3
50
100
150
Ambient Temperature --- Ta(℃)
200
CYStek Product Specification
Spec. No. : C201A3-H
Issued Date : 2003.11.27
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
3
NH10
α3
C
D
H
I
G
α1
Style: Pin 1.Base 2.Emitter 3.Collector
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNH10A3
CYStek Product Specification