CYStech Electronics Corp. Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTP6520A3 Features • High Breakdown Voltage:BVCEO≥-350V • Complementary to BTN6517A3 Symbol BTP6520A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature BTP6520A3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg -350 -350 -5 -500 625 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 *VBE(sat) 3 VBE(on) hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob -350 -350 -5 20 30 30 20 15 40 - - -50 -50 -0.3 -0.35 -0.5 -1.0 -0.75 -0.85 -0.9 -2 200 200 200 6 V V V nA nA V V V V V V V V MHz pF Test Conditions IC=-100μA IC=-1mA IE=-10μA VCB=-250V VEB=-4V IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA VCE=-10V, IC=-100mA VCE=-10V, IC=-1mA VCE=-10V,IC=-10mA VCE=-10V,IC=-30mA VCE=-10V,IC=-50mA VCE=-10V,IC=-100mA VCE=-20V, IC=-10mA, f=20MHz VCB=-20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% BTP6520A3 CYStek Product Specification Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 100000 Saturation Voltage---(mV) Current Gain---HFE VCE=10V 100 10 1 VCE(SAT)@IC=10IB 10000 1000 100 10 0.1 1 10 100 1000 1 Collector Current---IC(mA) 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current On voltage vs Collector Current 1000 ON Voltage---(mV) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB 100 VBE(on)@VCE=10V 100 1 10 100 1000 Collector Current---IC(mA) 0.1 1 10 100 1000 Collector Collector---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 700 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTP6520A3 CYStek Product Specification Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-92 Dimension α2 A Marking: B 1 2 3 6520 α3 C D H I G α1 Style: Pin 1.Emitter 2.Base 3.Collector E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP6520A3 CYStek Product Specification