CYSTEKEC BTPA94N3

CYStech Electronics Corp.
Spec. No. : C309N3-H
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4
High Voltage PNP Epitaxial Planar Transistor
BTPA94N3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.
• Wide SOA (safe operation area).
• Complementary to BTNA44N3.
Symbol
Outline
BTPA94N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTPA94N3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
-400
-400
-6
-300
225
556
150
-55~+150
V
V
V
mA
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C309N3-H
Issued Date : 2003.06.30
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
hFE 1
*hFE 2
*hFE 3
*hFE 4
Cob
Min.
-400
-400
-6
50
56
50
40
-
Typ.
-
Max.
-10
-10
-10
-0.2
-0.3
-0.6
-0.9
270
6
Unit
V
V
V
µA
µA
µA
V
V
V
V
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-400V
VEB=-6V
VCB=-400V
IC=-1mA, IB=-0.1mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
K
P
Q
Range
56~120
82~180
120~270
BTPA94N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C309N3-H
Issued Date : 2003.06.30
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
VCE=6V
Current Gain---HFE
Current Gain---HFE
VCE=10V
100
100
10
10
0.1
1
10
Collector Current---IC(mA)
0.1
100
Saturation Voltage vs Collector Current
1
10
Collector Current---IC(mA)
100
Saturation Voltage vs Collector Current
1
1
Saturation Voltage---(V)
Saturation Voltage---(V)
VCE(sat)@IC=10IB
0.1
0.01
VBE([email protected]=10IB
0.1
1
10
100
0.1
Collector Current---IC(mA)
On Voltage vs Collector Current
10
100
Power Derating Curve
0.8
250
Power Dissipation---PD(mW)
0.7
0.6
On Voltage---(V)
1
Collector Current---IC(mA)
0.5
VBE(on)@VCE=3V
0.4
0.3
0.2
0.1
200
150
100
50
0
0
0.1
1
10
Collector Current---IC(mA)
BTPA94N3
100
0
50
100
150
Ambient Temperature --- Ta(℃ )
200
CYStek Product Specification
Spec. No. : C309N3-H
Issued Date : 2003.06.30
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
SOT-23 Dimension
Marking:
A
L
3
B
TE
4Z
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTPA94N3
CYStek Product Specification