CYStech Electronics Corp. Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94N3 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA. • Wide SOA (safe operation area). • Complementary to BTNA44N3. Symbol Outline BTPA94N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTPA94N3 Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg -400 -400 -6 -300 225 556 150 -55~+150 V V V mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 *hFE 2 *hFE 3 *hFE 4 Cob Min. -400 -400 -6 50 56 50 40 - Typ. - Max. -10 -10 -10 -0.2 -0.3 -0.6 -0.9 270 6 Unit V V V µA µA µA V V V V pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VEB=-6V VCB=-400V IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-20mA, IB=-2mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank K P Q Range 56~120 82~180 120~270 BTPA94N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=6V Current Gain---HFE Current Gain---HFE VCE=10V 100 100 10 10 0.1 1 10 Collector Current---IC(mA) 0.1 100 Saturation Voltage vs Collector Current 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 1 1 Saturation Voltage---(V) Saturation Voltage---(V) VCE(sat)@IC=10IB 0.1 0.01 VBE(sat@IC=10IB 0.1 1 10 100 0.1 Collector Current---IC(mA) On Voltage vs Collector Current 10 100 Power Derating Curve 0.8 250 Power Dissipation---PD(mW) 0.7 0.6 On Voltage---(V) 1 Collector Current---IC(mA) 0.5 VBE(on)@VCE=3V 0.4 0.3 0.2 0.1 200 150 100 50 0 0 0.1 1 10 Collector Current---IC(mA) BTPA94N3 100 0 50 100 150 Ambient Temperature --- Ta(℃ ) 200 CYStek Product Specification Spec. No. : C309N3-H Issued Date : 2003.06.30 CYStech Electronics Corp. Revised Date : Page No. : 4/4 SOT-23 Dimension Marking: A L 3 B TE 4Z S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTPA94N3 CYStek Product Specification