CYSTEKEC HBCA143TS6R

Spec. No. : C154S6R
Issued Date : 2005.01.13
Revised Date :
Page No. : 1/6
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA143TS6R
Features
•Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•One DTA143T chip and one DTC143T chip in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference
Equivalent Circuit
Outline
SOT-363R
HBCA143TS6R
RB2
TR1
TR2
RB1
RB1=4.7kΩ , RB2=4.7 kΩ
HBCA143TS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154S6R
Issued Date : 2005.01.13
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Tr1(NPN)
Tr2(PNP)
50
-50
50
-50
5
-5
100
-100
200 (Note)
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Note : 150mW per element must not be exceeded.
Characteristics (Ta=25℃)
•Tr1(NPN)
Parameter
Symbol
Min
Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
50
50
5
100
3.29
-
4.7
250
0.5
0.5
0.3
600
6.11
-
V
V
V
µA
µA
V
kΩ
MHz
Test Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC=5mA, IB=0.25mA
VCE=5V, IC=1mA
VCE=10V, IE=5mA, f=100MHz*
* Transition frequency of the device
•Tr2(PNP)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol Min. Typ. Max. Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
-50
-50
-5
100
3.29
-
0.1
4.7
250
V
V
V
-0.5 µA
-0.5 µA
-0.3
V
600
6.11 kΩ
MHz
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-50V
VEB=-4V
IC=-5mA, IB=-0.25mA
VCE=-5V, IC=-1mA
VCE=-10V, IC=-5mA,f=100MHz *
* Transition frequency of the device
HBCA143TS6R
CYStek Product Specification
Spec. No. : C154S6R
Issued Date : 2005.01.13
Revised Date :
Page No. : 3/6
CYStech Electronics Corp.
Characteristic Curves
•Tr1(NPN)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
[email protected]=5V
10
100
[email protected]=20IB
10
0.1
1
10
100
1
10
100
Collector Current --IC(mA)
Collector Current --- IC(mA)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
•Tr2(PNP)
1000
1000
VCE=5V
Current Gain---HFE
Saturation Voltage---(mV)
VCE(SAT)@IC=20IB
100
10
100
0.1
HBCA143TS6R
1
10
Collector Current---IC(mA)
100
0.1
1
10
100
Collector Current---IC(mA)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154S6R
Issued Date : 2005.01.13
Revised Date :
Page No. : 4/6
Power Derating Curves
Power Dissipation---P D(mW)
250
200
Dual
Single
150
100
50
0
0
HBCA143TS6R
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154S6R
Issued Date : 2005.01.13
Revised Date :
Page No. : 5/6
Reel Dimension
Carrier Tape Dimension
HBCA143TS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154S6R
Issued Date : 2005.01.13
Revised Date :
Page No. : 6/6
SOT-363 Dimension
Style:
Pin 1. Emitter1 (E1)
Pin 2. Base1 (B1)
Pin 3. Collector2 (C2)
Pin 4. Emitter2 (E2)
Pin 5. Base2 (B2)
Pin 6. Collector1 (C1)
Marking:
6-Lead SOT-363R Plastic
Surface Mounted Package
CYStek Package Code: S6R
*:Typical
Inches
Min.
Max.
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026BSC
0.004
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
1.8
2.2
1.15
1.35
0.8
1.1
0.1
0.3
0.65BSC
0.1
DIM
J
K
N
S
Y
Inches
Min.
Max.
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
Millimeters
Min.
Max.
0.1
0.25
0.1
0.30
0.20 REF
2.00
2.20
0.30
0.40
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBCA143TS6R
CYStek Product Specification