Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 1/3 CYStech Electronics Corp. SURFACE MOUNT SWITCHING DIODE MM4148SM Description The MM4148SM is designed for high-speed switching application in hybrid thick-and thin-film circuits. Absolute Maximum Ratings ( Operating temperature range applies unless otherwise specified ) Characteristics Symbol Reverse Voltage VR Peak Reverse Voltage VRM Rectified Current(Average) Half Wave Rectification with Resistive Load at IO Tamb=25°C and f ≥ 50Hz IFSM Surge Forward Current at t<1s and Tj=25°C Ptot Power Dissipation at Tamb=25°C Junction Temperature Tj Storage Temperature Range Ts Value 75 100 Unit V V 150 mA 500 500 200 -65 to +200 mA mW °C °C Characteristics ( Tj=25°C) Characteristics Forward Voltage at IF=10mA Leakage Current VR=20V VR =75V VR =20V, Tj=150°C Reverse Breakdown Voltage tested with 100us Pulses Capacitance at VF= VR =0 Voltage Rise when Switching On Tested with 50mA Forward Pulses Tp=0.1us, Rise Time<30ns, fp=5~100kHz Reverse Recovery Time From IF=-IR=10mA to IRR=-1mA, VR=6V, RL=100Ω Thermal Resistance, Junction to Ambient Air Rectification Efficiency at f=100MHz, VRF=2V MM4148SM Symbol VF V(BR)R Ctot Min 100 - Typ - Max 1 25 5 50 4 Unit V nA uA uA V pF Vfr - - 2.5 V trr - - 4 ns Rth JA ηv 0.45 - 350 - ℃/W - IR CYStek Product Specification Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 2/3 CYStech Electronics Corp. Characteristic Curves Admissible Repetitive Peak Forward Current vs Pulse Duration Peak Forward Current---IFRM(A) 10 ν =0 I ν =.0.1 ν=tp/T t IFRM t 1 T ν =0.5 ν =0.2 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Duration---tp(s) Dynamic Forward Resistance vs Forward Current Forward Current vs Forward Voltage 1000 100 10 Dynamic Resistance---Rf(Ω) Forward Current---IF(mA) 10000 Tj=25℃ 1 Tj=100℃ 0.1 T j=25 ℃ f=1kHz 1000 100 0.01 0 0.2 0.4 0.6 0.8 1 10 1 0.01 1.2 1.4 1.6 0.1 1 10 100 Forward Current---IF(mA) Forward Voltage---VF(V) Admissible Power Dissipation vs Ambient Temperature Relative Capacitance vs Reverse Voltage 1.1 Tj=25℃ f=1kHz 1.05 500 Relative Capacitance--Ctot(VR)/Ctot(0V) Amissible power dissipation-Ptot(mW) 600 400 300 200 100 0.95 0.9 0.85 0 0 50 100 150 200 Ambient Temperature---TA(℃ ) MM4148SM 1 250 0.8 0 2 4 6 8 10 Reverse Voltage---VR(V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 3/3 Mini-melf(SOD-80C) Dimension Cathode Mark A B D C LL-34 Mini-Melf SOD-80C CYStek package code:SM *:Typical Inches Min. Max. 0.0512 0.0591 0.0118 0.0197 DIM A B Millimeters Min. Max. 1.30 1.50 0.30 0.50 DIM C D Inches Min. Max. 0.0118 0.0197 0.1260 0.1417 Millimeters Min. Max. 0.30 0.50 3.2 3.6 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MM4148SM CYStek Product Specification