CYStech Electronics Corp. Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 1/4 N-CHANNEL MOSFET MTN0401LA3 Description The MTN0401LA3 is a N-channel enhancement-mode MOSFET. Equivalent Circuit Outline MTN0401LA3 TO-92 G：Gate S：Source D：Drain SGD Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage--Continuous Gate-Source Voltage-- Non-repetitive(tp≤50µs) Continuous Drain Current (Ta=25°C) Continuous Drain Current (Ta=100°C) Pulsed Drain Current (Ta=25°C) Total Power Dissipation (Ta=25°C) Derate Above 25°C Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Lead Temperature, for 10 second Soldering Symbol VDS VGS VGS ID ID IDM PD TJ Tstg Rth , ja TL Limits 60 ±20 ±40 640 380 3 (Note) 800 3.2 -55~+150 -55~+150 156 260 Unit V V V mA mA A mW mW/°C °C °C °C/W °C Note : Pulse Width ≤ 300µs, Duty cycle ≤2% MTN0401LA3 CYStek Product Specification Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 2/4 CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS *ID(ON) *ID(ON) Min. 60 0.5 250 640 150 - *RDS(ON) *GFS Ciss Coss Crss Typ. - Max. 2.5 10 -10 1 5 5 3 60 50 15 Unit V V nA nA µA mA mA mS Test Conditions VGS=0V, ID=10µA VDS=VGS, ID=0.25mA VGS=+20V, VDS=0V VGS=-20V, VDS=0V VDS=48V, VGS=0V VDS=10V, VGS=4.5V VDS=10V, VGS=10V ID=50mA, VGS=3.5V ID=75mA, VGS=4.5V ID=1A, VGS=10V VDS=10V, ID=200mA pF VDS=15V, VGS=0V, f=1MHz Ω *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Characteristic Curves TYPICAL OUTPUT CHARACTERISICS TYTICAL TRANSFER CHARACTERISTIC 1.4 1.4 VGS=8V 1.2 1.0 DRAIN CURRENT---ID(A) DRAIN CURRENT---ID(A) 1.2 VGS=5V 0.8 VGS=4V 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0 1 2 3 4 5 6 7 DRAIN-SOURCE ---VDS(V) MTN0401LA3 8 9 10 0 1 2 3 4 5 6 7 8 9 10 GAT E-SOURCE VOLT AGE---VGS(V) CYStek Product Specification Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 3/4 CYStech Electronics Corp. STATIC DRAIN-SOURCE ON-STATE RESISTANCE VS GATE-SOURCE VOLTSAGE 10 3.5 9 VGS=5V 3.0 2.5 2.0 VGS=10V 1.5 1.0 0.5 RESISTANCE--- RDS(on)(ohm) 4.0 STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE RESISTANCE--- RDS(on)(ohm) ST AT IC DRAIN-SOURCE ON-ST AT E RESIST ANCE vs DRAIN CURRENT 8 7 6 5 ID=115mA 4 ID=57.5m A 3 2 1 0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 DRAIN CURRENT ---ID(A) REVERSE DRAIN CURRENT---IDR(A) FORWARD TRANSFER ADMITTANCE--GFS(ms) 20 1.00 VGS=10V 100 10 1 0.001 0.01 0.1 Pulsed 0.10 VGS=10V 0.01 0.00 1 SWIT CHING VGS=0V 0.50 1.00 1.50 SOURCE-DRAIN VOLT AGE---VSD(V) DRAIN CURRENT ---ID(A) CHARACT ERIST ICS POWER DERATING CURVE 1000 0.9 POWER DISSIPATION---PD(W) SWITCHING TIMES---(ns) 15 REVERSE DRAIN CURRENT vs SOURCEDRAIN VOLTAGE 1000 Tf T d(off) T d(on) 10 Tr 1 0.001 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 0.1 DRAIN CURRENT ---ID(A) MTN0401LA3 10 GAT E-SOURCE VOLT AGE---VGS(V) FORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT 100 5 1 0 50 100 150 200 AMBIENT TEMPERATURE---Ta(℃) CYStek Product Specification Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 4/4 CYStech Electronics Corp. TO-92 Dimension α2 A Marking: B 1 2 0401L 3 α3 C D H I G Style: Pin 1.Source 2.Gate 3.Drain α1 E 3-Lead TO-92 Plastic Package CYStek Package Code: A3 F *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN0401LA3 CYStek Product Specification