DAESAN KBJ4G

CURRENT 4.0 Amperes
VOLTAGE 50 to 1000 Volts
KBJ4A THRU KBJ4M
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 120A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
P
N
A
H
C
B
L
_
K
E
M
J
R
D
G
Mechanical Data
KBJ
· Case : Molded Plastic
· Terminals : Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity : Molded on Body
· Mounting : Through Hole for #6 Screw
· Mounting Torque : 5.0 in-Ibs Maximum
· Approx. Weight : 4.6 grams
· Marking : Type Number
Dim
Min
Max
Dim
Min
Max
A
24.80
25.20
J
3.30
3.70
B
14.70
15.30
K
1.50
1.90
C
4.00 Nominal
L
9.30
9.70
D
17.20
17.80
M
2.50
2.90
E
0.90
1.10
N
3.40
3.80
G
7.30
7.70
P
4.40
4.80
H
3.10 O/
3.40 O/
R
0.60
0.80
A ll Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
KBJ
4A
KBJ
4B
KBJ
4D
KBJ
4G
KBJ
4J
KBJ
4K
KBJ
4M
Units
Peak Repetitive Reverse voltage
Working Peak Reverse voltage
DC Blocking voltage
VRMM
VRWM
VR
50
100
200
400
600
800
1000
Volts
RMS Reverse voltage
VR(RMS)
35
70
140
280
420
560
700
Volts
Io
4.0
Amps
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
IFSM
120
Amps
Forward voltage per element
@ IF=2.0 A
VFM
1.0
Volts
Peak Reverse Current at Rated
DC Blocking voltage
@ TC=25℃
Average Rectified Output Current @ TC=115 ℃
@ TC=125℃
Typical Junction Capacitance
per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
IR
5.0
500
μA
Cj
40
pF
RθJA
5.5
℃/W
-65 to +150
℃
Tj
TSTG
Notes:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
RATINGS AND CHARACTERISTIC CURVES KBJ4A THRU KBJ4M
I F , INST ANT ANEOUS FOR WARD CURRENT
(A)
CURRENT
RECTIFIED
I O , AVERAGE
10
(A)
6
5
4
3
2
1
Resistive or
Inductive load
0
25
50
75
100
125
150
T J = 150°C
T J = 25°C
1.0
0.1
Pulse width = 300µs
0.01
0
160
C j, JUNCTION CAP ACIT ANCE (pF)
Single half-sine-wave
(JEDEC method)
T j = 150°C
120
80
40
0
1.2
1.8
f = 1MHz
T j = 25°C
100
0.1
1.0
10
V R , REVERSE VOL TAGE (V)
Fi g. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fi g. 3 Max Non-Repetitive Sur ge Current
(µA)
1.6
10
100
10
1000
T J = 150°C
CURRENT
1
I R , INST ANT ANEOUS REVERSE
(A)
CURRENT
0.8
1000
180
I FSM , PEAK FWD SURGE
0.4
V F , INST ANT ANEOUS FOR WARD VOL TAGE (V)
Fi g. 2 Typical Forward Characteristics
T C , CASE TEMPERA TURE (°C)
Fi g. 1 Forward Current Deratin g Curve
T J = 125°C
100
T J = 100°C
10
1.0
T J = 25°C
0.1
0
20
PERCENT
40
60
80
100
120
140
OF RA TED PEAK REVERSE VOL TAGE (%)
Fi g. 5 Typical Reverse Characteristics
100