DAESAN SBR5050

CURRENT 50.0Amperes
VOLTAGE 30 to 60 Volts
SBR5030 THRU SBR5060
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed:
250℃/10 seconds, 0.17" (4.3mm) from case
TO-3P
.120(3.05)
DIA.
.115(2.92)
.635(16.13)
.625(15.88)
.320(8.13)
.310(7.87)
.205(5.21)
.195(4.49)
.180(4.53)
.170(4.32)
.840(21.34)
.820(20.83)
30
.12(3.0)
.11(2.8)
.170(4.32)
.150(3.81)
.095
(2.4)
.800(20.32)
.770(19.56)
Mechanical Data
.030(0.8)
.020(0.5)
.050(1.27)
.045(1.14)
.225(5.7)
.205(5.2)
· Case : JEDEC TO-3P molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
· Weight : 0.20ounce, 5.6 grams
PIN 1
+
PIN 1
PIN 3
CASE
PIN 2
PIN 3
Positive CT
Suffix "C"
Negative CT
Suffix "A"
CASE
PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
SBR5030 SBR5035 SBR5040 SBR5045 SBR5050 SBR5060 Units
Maximum repetitive peak reverse voltage
VRRM
30
35
40
45
50
60
Volts
Maximum RMS voltage
VRMS
21
24
28
32
35
42
Volts
Maximum DC blocking voltage
VDC
30
35
40
45
50
60
Volts
Maximum average forward rectified current
at VR(equiv.)<0.2VR(DC) (See Fig 1)
I(AV)
50.0
Amps
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
400.0
Amps
Maximum instantaneous forward voltage
at 25A (Note 1)
VF
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
IR
0.65
TA=25℃
TA=125℃
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
0.70
Volts
10.0
RθJC
100
150
1.4
mA
℃/W
TJ
-65 to +125
℃
TSTG
-65 to +150
℃
RATINGS AND CHARACTERISTIC CURVES SBR5030-SBR5060
FIG.5-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES
600
50
500
PEAK FORWARD SURGE
CURRENT (AMPERES)
40
── SBR5030-SBR5045
- - - SBR5050-SBR5060
30
20
SINGLE PHASE
HALF WAVE 50Hz
INDUCTIVE OR
RESISTIVE LOAD
10
400
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
300
200
100
0
0
50
100
150
0
1.0
LEAD TEMPERATURE (℃)
2.0
5.0
10
20
50
NUMBER OF CYCLES AT 60Hz
FIG.2-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.3-TYPICAL REVERSE CHARACTERISTICS
100
10
SBR5030-SBR5045
10
SBR5050-SBR5060
1.0
TJ=25℃
PULSE WIDTH=300㎲
1% DUTY CYCLE
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
INSTANTANEOUS FORWARD CURRENT (AMPERES)
TC=150℃
TC=125℃
1.0
TC=75℃
0.1
TC=25℃
0.01
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
── SBR5030-SBR5045
- - - SBR5050-SBR5060
0.001
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE
140
100