F E AT U R E S MODEL NO. 100C1296 1 5 - 1 00 0 MHz High Isolation +40 dBm 3rd Order Intercept Non-Reflective CMOS Driver SMA Connectors SP6T High Isolation PIN Diode SP6T PART IDENTIFICATION 4.00 ± .03 3.836 0.8 J1 J2 J3 J4 J5 J6 .60 0.8 J1 1.586 J2 J3 J4 J5 J6 1.75 ± .03 1 2 3 4 5 GND +V CONT 6 J7 50 Ω 50 Ω • .093 DIA THRU (4 PLACES) 50 Ω • 50 Ω 50 Ω • • 50 Ω • SMA FEMALE (7 PLACES) SOLDER TERM (8 PLACES) CONT 1 “0” .xx = .02 .xxx = 0.10 CONT 2 “0” CONT 3 “0” CONT 5 “0” CONT 4 “0” CONT 6 +V “1” GND J7 VSWR I.L. (dB) ISO (dB) GUARANTEED PERFORM A NCE 1.6 3.0 120 1.5 2.5 100 1.4 2.0 80 Parameter T YP IC A L P E R F OR MA NCE at 25 ° C Min Typ Max Units Operating Frequency DC Current ISO 15 20 Control Type Control Current 1.5 High Insertion Loss 60 I. LOSS 1.2 1.0 40 1.1 0.5 20 Isolation VSWR 1.0 0 0 10 40 100 400 FREQUENCY (MHz) 1000 3000 90 75 60 50 VSWR Impedance Switching Speed Transition (Rise/Fall) Time Switching (Video) Transients Intercept Points 2nd 3rd RF Power Operate Operating Temperature -55 DA I C O In d u s t r i e s MHz mA CMOS Low 1.3 1000 25 1.2 1.5 95 85 70 60 1.15/1 50 ±10 ±10 1.5 1.8 At +10 VDC Supply To +15 VDC Supply 6 Line Logic “0” = Off Logic “1” = On VIH = +V VIL = +0V 30 - 300 MHz 15 - 1000 MHz 15 - 200 MHz 200 - 400 MHz 400 - 700 MHz 700 - 1000 MHz 1.4/1 50 1.5 1 +70 +40 +15 +25 µA µA dB dB dB dB dB dB Conditions +85 OHMS µSEC µSEC V dBm dBm dBm °C 50% Control to 90% / 10% RF 10% / 90% to 90% / 10% RF Peak Value TA Rev. D / Iss. 1