DCR06C THRU DCR06F DC COMPONENTS CO., LTD. DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 600 Volts CURRENT - 0.6 Ampere Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 300 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-92 .190(4.83) .170(4.33) Pinning o 2 Typ .190(4.83) .170(4.33) 1 = Cathode, 2 = Gate, 3 = Anode o 2 Typ o Absolute Maximum Ratings(TA=25 Characteristic C) Symbol Rating Unit VDRM 300 400 600 V On-State RMS Current (TA=57oC, 180o Conduction Angles) IT(RMS) 0.6 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) ITSM 8 A Forward Peak Gate Current IGM 0.1 A Peak Repetitive Off-State Voltage DCR06C DCR06D DCR06F Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature .500 Min (12.70) .022(0.56) .014(0.36) .050 Typ (1.27) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 PGM 0.1 W PG(AV) 0.01 W TJ -40 to +110 TSTG -40 to +150 .022(0.56) .014(0.36) .050 Typ o o 5 Typ 5 Typ (1.27) o C Dimensions in inches and (millimeters) o C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Peak Repetitive Forward Off-State Blocking Current Symbol TJ=25oC TJ=110oC IDRM Min Typ Max - - 10 - - 100 Unit µA Test Conditions VAK=Rated VDRM RGK=1KΩ Peak Forward On-State Voltage VTM - - 1.7 V ITM=0.6A Peak Continuous DC Gate Trigger Current IGT - - 200 µA VAK=7V DC, RL=100Ω Continuous DC Gate Trigger Voltage VGT - - 0.8 V IH - - 5.0 mA DC Holding Current Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-on Time(tD+tR) Thermal Resistance, Junction to Case VAK=7V DC, RL=100Ω RGK=1KΩ dv/dt - 5.0 - V/µS RGK=1KΩ Tgt - 2.2 - µsec IGT=10mA RθJC - 75 - o - C/W