DC COMPONENTS CO., LTD. R DMBT4124 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 .108(0.65) .089(0.25) 2 o Absolute Maximum Ratings(TA=25 Characteristic C) Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 30 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 25 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 IC=10µA, IE=0 Collector Cutoff Current ICBO - - 50 nA VCB=20V Emitter Cutoff Current IEBO - - 50 nA VEB=3V Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.3 V IC=50mA, IB=5mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 0.95 V IC=50mA, IB=5mA hFE1 120 - 360 - IC=2mA, VCE=1V DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width hFE2 60 - - - fT 300 - - MHz - - 4 pF Cob 380µs, Duty Cycle 2% IC=50mA, VCE=1V IC=10mA, VCE=20V, f=1MHz VCB=5V, f=1MHz, IE=0